2SC2840 Datasheet. Specs and Replacement

Type Designator: 2SC2840  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 1.1 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SPA

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2SC2840 datasheet

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2SC2840

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2SC2840

SMD Type Transistors NPN Transistors 2SC2845 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec... See More ⇒

 8.2. Size:198K  inchange semiconductor

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2SC2840

isc Silicon NPN Power Transistor 2SC2841 DESCRIPTION High Breakdown Voltage- V = 500V(Min) (BR)CBO High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒

 8.3. Size:63K  inchange semiconductor

 2sc2845.pdf pdf_icon

2SC2840

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2845 DESCRIPTION Low Noise High Gain High Current-Gain Bandwidth Product APPLICATIONS Designed for use in UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base ... See More ⇒

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Detailed specifications: 2SC2837, 2SC2838, 2SC2839, 2SC2839D, 2SC2839E, 2SC2839F, 2SC283H, 2SC284, BD136, 2SC2841, 2SC2844, 2SC2845, 2SC2847, 2SC284H, 2SC285, 2SC2850, 2SC2851

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