2SC2903 Datasheet and Replacement
Type Designator: 2SC2903
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
2SC2903 Transistor Equivalent Substitute - Cross-Reference Search
2SC2903 Datasheet (PDF)
2sa1207 2sc2909 2sc2909.pdf
Ordering number ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2003B Excellent linearity of hFE and small Cob. [2SA1207/2SC2909] Fast switching speed. 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter... See More ⇒
2sc2908.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2908 DESCRIPTION With TO-3PN package Low collector saturation voltage APPLICATIONS For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBO... See More ⇒
Datasheet: 2SC2897 , 2SC2898 , 2SC2899 , 2SC29 , 2SC290 , 2SC2900 , 2SC2901 , 2SC2902 , D209L , 2SC2904 , 2SC2905 , 2SC2906 , 2SC2906A , 2SC2907 , 2SC2908 , 2SC2909 , 2SC291 .
History: BFV90A | DTA114WE | MMUN2211LT1G | HA7599 | 2SC2900 | TI801 | HEPS5022R
Keywords - 2SC2903 transistor datasheet
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History: BFV90A | DTA114WE | MMUN2211LT1G | HA7599 | 2SC2900 | TI801 | HEPS5022R
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