All Transistors. 2SC2922 Datasheet

 

2SC2922 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC2922

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector Current |Ic max|: 17 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 25 MHz

Forward Current Transfer Ratio (hFE), MIN: 33

Noise Figure, dB: -

Package: XM20

2SC2922 Transistor Equivalent Substitute - Cross-Reference Search

2SC2922 Datasheet (PDF)

1.1. 2sc2922.pdf Size:28K _sanken-ele

2SC2922

LAPT 2SC2922 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 6.0 0.3 36.4 VCBO 180 ICBO VCB=180V 100max A V 0.2 24.4 2.1 0.1 VCEO 180 IEBO VEB=5V 100max A 2-o

1.2. 2sc2922.pdf Size:165K _inchange_semiconductor

2SC2922
2SC2922

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2922 DESCRIPTION Ў¤ With MT-200 package Ў¤ Complement to type 2SA1216 APPLICATIONS Ў¤ Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VC

4.1. 2sc2925.pdf Size:77K _panasonic

2SC2922
2SC2922

Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 5.00.2 4.00.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) 0.70.1 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 0.45+0.15 0.45+0.15 0.1 0.1 Collector-base voltage (Emitter open) VCBO 60 V 2.5+0.6 2.

4.2. 2sc2925_e.pdf Size:40K _panasonic

2SC2922
2SC2922

Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO

4.3. 2sc2928.pdf Size:42K _hitachi

2SC2922

4.4. 2sc2929.pdf Size:105K _no

2SC2922

4.5. 2sc2921.pdf Size:27K _sanken-ele

2SC2922

LAPT 2SC2921 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB=160V 100max A 0.2 24.4 2.1 VCEO 160 V VEB=5V 100max A 2-o3.2 IEBO 0.

4.6. 2sc2920.pdf Size:128K _inchange_semiconductor

2SC2922
2SC2922

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2920 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RAT

4.7. 2sc2927.pdf Size:56K _inchange_semiconductor

2SC2922
2SC2922

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2927 DESCRIPTION ·With TO-220 package ·High collector-emitter voltage : VCEO=300V ·High frequency:fT=40MHz(Min) APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 s

4.8. 2sc2928.pdf Size:130K _inchange_semiconductor

2SC2922
2SC2922

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2928 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage,high speed and high power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARA

4.9. 2sc2923.pdf Size:109K _inchange_semiconductor

2SC2922
2SC2922

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION Ў¤ With TO-202 package Ў¤ High VCEO Ў¤ Low COB APPLICATIONS Ў¤ For color TV chroma output applications PINNING(See Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM

4.10. 2sc2921.pdf Size:163K _inchange_semiconductor

2SC2922
2SC2922

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2921 DESCRIPTION Ў¤ With MT-200 package Ў¤ Complement to type 2SA1215 APPLICATIONS Ў¤ Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VC

4.11. 2sc2929.pdf Size:269K _inchange_semiconductor

2SC2922
2SC2922

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL P

Datasheet: 2SC2913 , 2SC2914 , 2SC2915 , 2SC2917 , 2SC2918 , 2SC292 , 2SC2920 , 2SC2921 , AC127 , 2SC2923 , 2SC2924 , 2SC2925 , 2SC2926 , 2SC2927 , 2SC2928 , 2SC2929 , 2SC292S .

 


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