2SC2960E
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2960E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 100(typ)
MHz
Collector Capacitance (Cc): 2.7
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
SPA
2SC2960E
Transistor Equivalent Substitute - Cross-Reference Search
2SC2960E
Datasheet (PDF)
7.1. Size:223K sanyo
2sa1481 2sc2960.pdf
Ordering number:EN829HPNP/NPN Epitaxial Planar Silicon Transistors2SA1481/2SC2960High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2033[2SA1481/2SC2960]B : BaseC : Collector( ) : 2SA1481E : EmitterSpecificationsSANYO : SPAAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating
8.1. Size:177K inchange semiconductor
2sc2965.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC2965DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSSwitching regulatorMotor controlsDeflections circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
8.2. Size:178K inchange semiconductor
2sc2964.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SC2964DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageMinimum Lot-to-Lot variations for robust devicePerformance and reliable operation.APPLICATIONSSwitching regulatorMotor controlsDeflections circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
Datasheet: 2N3200
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