2SC3032 Specs and Replacement
Type Designator: 2SC3032
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO218
2SC3032 Substitution
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2SC3032 datasheet
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC3032 DESCRIPTION Low Collector Saturation Voltage Low Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose app... See More ⇒
Ordering number EN996B NPN Triple Diffused Planar Silicon Transistor 2SC3039 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3039] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Paramet... See More ⇒
Ordering number EN949B NPN Triple Diffused Planar Silicon Transistor 2SC3038 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 500V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3038] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Paramet... See More ⇒
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
Detailed specifications: 2SC3026 , 2SC3027 , 2SC3028 , 2SC3029 , 2SC302M , 2SC303 , 2SC3030 , 2SC3031 , S9014 , 2SC3033 , 2SC3034 , 2SC3035 , 2SC3036 , 2SC3037 , 2SC3038 , 2SC3039 , 2SC304 .
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History: BD139 | BC507B
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