All Transistors. 2SC3069 Datasheet

 

2SC3069 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3069

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 800

Noise Figure, dB: -

Package: TO92

2SC3069 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC3069 Datasheet (PDF)

1.1. 2sc3069.pdf Size:86K _sanyo

2SC3069
2SC3069

Ordering number:EN934G NPN Epitaxial Planar Silicon Transistor 2SC3069 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit:mm drivers, muting circuit. 2003A [2SC3069] Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max

4.1. 2sc3068.pdf Size:85K _sanyo

2SC3069
2SC3069

Ordering number:EN943G NPN Epitaxial Planar Silicon Transistor 2SC3068 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency, general-purpose amplifier., various unit:mm drivers, muting circuit. 2003A [2SC3068] Features High DC current gain (hFE=800 to 3200). Large current capacity. Low collector-to-emitter saturation

4.2. 2sc3066.pdf Size:94K _sanyo

2SC3069
2SC3069

 4.3. 2sc3064.pdf Size:374K _sanyo

2SC3069
2SC3069

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.4. 2sc3067.pdf Size:139K _sanyo

2SC3069
2SC3069

 4.5. 2sc3063.pdf Size:63K _panasonic

2SC3069
2SC3069

Power Transistors 2SC3063 Silicon NPN triple diffusion planar type Unit: mm For TV video output amplification 8.0+0.5 0.1 3.20.2 ? 3.160.1 Features High collector to emitter voltage VCEO Small collector output capacitance Cob TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25C Parameter Symbol Rating Un

4.6. 2sc3059 2sc3060 2sc3061 2sc3178.pdf Size:640K _fuji

2SC3069
2SC3069

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its

4.7. 2sc3063 3da3063.pdf Size:213K _no

2SC3069
2SC3069

2SC3063(3DA3063) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于彩电色度输出。 Purpose: Video output amplifier. 特点:耐压高,共基极输出电容小。 Features: High V , low C . CEO ob 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA

4.8. 2sc3063.pdf Size:170K _jmnic

2SC3069
2SC3069

JMnic Product Specification Silicon NPN Power Transistors 2SC3063 DESCRIPTION ·With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For TV video output amplification PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-em

4.9. 2sc3063.pdf Size:138K _inchange_semiconductor

2SC3069
2SC3069

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3063 DESCRIPTION Ў¤ With TO-126 package Ў¤ High VCEO Ў¤ Low COB APPLICATIONS Ў¤ For TV video output amplification PINNINGЈЁ PIN 1 2 3 see Fig.2Ј© DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage

4.10. 2sc3060.pdf Size:131K _inchange_semiconductor

2SC3069
2SC3069

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3060 DESCRIPTION ·With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators ·Class C and D amplifiers ·Deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitt

4.11. 2sc3061.pdf Size:131K _inchange_semiconductor

2SC3069
2SC3069

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3061 DESCRIPTION ·With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators ·Class C and D amplifiers ·Deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitt

Datasheet: 2SC3061 , 2SC3062 , 2SC3063 , 2SC3064 , 2SC3065 , 2SC3066 , 2SC3067 , 2SC3068 , 2SC828 , 2SC307 , 2SC3070 , 2SC3071 , 2SC3072 , 2SC3072A , 2SC3072B , 2SC3072C , 2SC3073 .

 
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