2SC3069 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3069
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 800
Noise Figure, dB: -
Package: TO92
2SC3069 Transistor Equivalent Substitute - Cross-Reference Search
2SC3069 Datasheet (PDF)
2sc3069.pdf
Ordering number:EN934GNPN Epitaxial Planar Silicon Transistor2SC3069High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low-frequency, general-purpose amplifier., variousunit:mmdrivers, muting circuit.2003A[2SC3069]Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage(VCE(sat)=0.
2sc3064.pdf
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2sc3068.pdf
Ordering number:EN943GNPN Epitaxial Planar Silicon Transistor2SC3068High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low-frequency, general-purpose amplifier., variousunit:mmdrivers, muting circuit.2003A[2SC3068]Features High DC current gain (hFE=800 to 3200). Large current capacity. Low collector-to-emitter sat
2sc3063.pdf
Power Transistors2SC3063Silicon NPN triple diffusion planar typeUnit: mmFor TV video output amplification8.0+0.50.13.20.2 3.160.1 Features High collector to emitter voltage VCEO Small collector output capacitance Cob TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter S
2sc3059 2sc3060 2sc3061 2sc3178.pdf
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2sc3063.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3063 DESCRIPTION With TO-126 package High VCEO Low COB APPLICATIONS For TV video output amplification PINNINGsee Fig.2 PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 300 V VCEO Col
2sc3063 3da3063.pdf
2SC3063(3DA3063) NPN /SILICON NPN TRANSISTOR : Purpose: Video output amplifier. :, Features: High V , low C . CEO ob/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA
2sc3063.pdf
isc Silicon NPN Power Transistor 2SC3063DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV video output amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sc3060.pdf
isc Silicon NPN Power Transistor 2SC3060DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 850V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circuit
2sc3061.pdf
isc Silicon NPN Power Transistor 2SC3061DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 850V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsMotor controlsUltrasonic generatorsClass C and D amplifiersDeflection circuit
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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