2SC3082 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3082
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1100 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT89
2SC3082 Transistor Equivalent Substitute - Cross-Reference Search
2SC3082 Datasheet (PDF)
2sc3087.pdf
Ordering number:EN1011BNPN Triple Diffused Planar Silicon Transistor2SC3087500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3087]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame
2sc3086.pdf
Ordering number:EN1010BNPN Triple Diffused Planar Silicon Transistor2SC3086500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2010C Wide ASO.[2SC3086]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParame
2sc3088.pdf
Ordering number:EN1017BNPN Triple Diffused Planar Silicon Transistor2SC3088500V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3088]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
2sc3083.pdf
Ordering number:EN947BNPN Triple Diffused Planar Silicon Transistor2SC3083400V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 500V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3083]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condit
2sc3089.pdf
Ordering number:EN1012ANPN Triple Diffused Planar Silicon Transistor2SC3089500V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2022A Wide ASO.[2SC3089]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Condi
2sc3083.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO500V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 400V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
2sc3089.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3089 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO800V) Fast switching speed Wide ASOSafe Operating Area APPLICATIONS 500V/7A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
2sc3085.pdf
isc Silicon NPN Power Transistor 2SC3085DESCRIPTIONHigh Breakdown Voltage-: V = 500V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sc3087.pdf
isc Silicon NPN Power Transistor 2SC3087DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sc3086.pdf
isc Silicon NPN Power Transistor 2SC3086DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sc3088.pdf
isc Silicon NPN Power Transistor 2SC3088DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
2sc3083.pdf
isc Silicon NPN Power Transistor 2SC3083DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3089.pdf
isc Silicon NPN Power Transistor 2SC3089DESCRIPTIONHigh Breakdown Voltage-: V = 800V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
