2N1962 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1962
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
Datasheet: 2N1958A , 2N1959 , 2N1959A , 2N196 , 2N1960 , 2N1960-46 , 2N1961 , 2N1961-46 , S8050 , 2N1962-46 , 2N1963 , 2N1963-46 , 2N1964 , 2N1964-46 , 2N1965 , 2N1965-46 , 2N1966 .