2SC3212A Datasheet and Replacement
Type Designator: 2SC3212A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO3PF
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2SC3212A Datasheet (PDF)
2sc3212 2sc3212a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VA
2sc3212.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SC3212
2sc3212.pdf

isc Silicon NPN Power Transistor 2SC3212DESCRIPTION Collector-Emiiter Sustaining Voltage-: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 1.0V(Max.)@ I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATI
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2904 | ECG185 | ECG332 | DTC124EEB | 2SA1488 | NXP3875G | 2N5784
Keywords - 2SC3212A transistor datasheet
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History: 2N2904 | ECG185 | ECG332 | DTC124EEB | 2SA1488 | NXP3875G | 2N5784



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