2SC3214 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

..1. Size:147K jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC3214 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For switching regulator and DC/DC converter applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA... See More ⇒

..2. Size:188K inchange semiconductor

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isc Silicon NPN Power Transistor 2SC3214 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Large safe operating area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators,Motor controls,Ultrasonic Oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

8.1. Size:121K nec

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8.2. Size:81K panasonic

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8.4. Size:156K jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC3212... See More ⇒

8.5. Size:152K jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC3210 DESCRIPTION With TO-3PFa package Low collector saturation voltage High breakdown voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage ... See More ⇒

8.6. Size:197K inchange semiconductor

2sc3211.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3211 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

8.7. Size:197K inchange semiconductor

2sc3212.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3212 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 500V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

8.8. Size:82K inchange semiconductor

2sc3211a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3211A DESCRIPTION With TO-3PFa package High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector... See More ⇒

8.9. Size:197K inchange semiconductor

2sc3210.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC3210 DESCRIPTION Collector-Emiiter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒

8.10. Size:124K inchange semiconductor

2sc3212 2sc3212a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3212 2SC3212A DESCRIPTION With TO-3PFa package Low collector saturation voltage High VCBO High speed switching APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VA... See More ⇒