2SC3276 Datasheet and Replacement

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity h = 140 600 (V = 1 V, I = 0.5 A) FE (1) CE C h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage V = 0.5 V (max) CE (sat) (I = 2 A, I = 5... See More ⇒

Ordering number EN1207A NPN Triple Diffused Planar Silicon Transistor 2SC3277 400V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high current. unit mm Wide ASO. 2022A Fast switching speed. [2SC3277] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi... See More ⇒

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2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Transistors Chroma Amplifier Transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 / 2SC3271F Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) 0.3... See More ⇒

2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E... See More ⇒

2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E... See More ⇒

2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E... See More ⇒

2SC3279-L MCC TM Micro Commercial Components 2SC3279-M 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC3279-N Phone (818) 701-4933 2SC3279-P Fax (818) 701-4939 Features High DC Current Gain and excellent hFE Linearity NPN Silicon h =140-600 (V =1.0V, I =0.5A) FE(1) CE C hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A) Epitaxial Transistors E... See More ⇒

2SC3279 2A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC current gain and excellent hFE linearity. G H Low saturation voltage. 1Emitter 1 1 1 2Collector 2 2 2 3 3 3 J 3Base CLASSIFICATION OF hFE A D Millimeter REF. Product-Rank 2SC32... See More ⇒

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC3279 TRANSISTOR (NPN) TO-92 FEATURES High DC current gain and excellent hFE linearity 1. EMITTER Low saturation voltage 2. COLLECTOR 3. BASE Equivalent Circuit 2SC3279=Device code 2SC Solid dot=Green molding compound device, 3279 if none,the normal device Z Z=Ra... See More ⇒

2SC3279(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V Dimensions in inches and (mi... See More ⇒

2SC3279(3DA3279) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier applications. Features High DC current gain and excellent h linearity, low saturation voltage. FE /Absolute maximum ratings(Ta=25 ) Symbol... See More ⇒

isc Silicon NPN Power Transistor 2SC3272 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV chroma output and video signal amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

isc Silicon NPN Power Transistor 2SC3277 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒