2N1981 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1981
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 170 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 110 °C
Transition Frequency (ft): 0.03 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO36
Datasheet: 2N1971 , 2N1972 , 2N1973 , 2N1974 , 2N1975 , 2N1978 , 2N198 , 2N1980 , D209L , 2N1982 , 2N1983 , 2N1984 , 2N1985 , 2N1986 , 2N1987 , 2N1988 , 2N1989 .