2N1986 Datasheet. Specs and Replacement

Type Designator: 2N1986  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO5

 2N1986 Substitution

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2N1986 datasheet

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Detailed specifications: 2N1978, 2N198, 2N1980, 2N1981, 2N1982, 2N1983, 2N1984, 2N1985, TIP31, 2N1987, 2N1988, 2N1989, 2N199, 2N1990, 2N1990-46, 2N1990N, 2N1990R

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