2SC3376 Specs and Replacement
Type Designator: 2SC3376
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO218
2SC3376 Substitution
- BJT ⓘ Cross-Reference Search
2SC3376 datasheet
isc Silicon NPN Power Transistor 2SC3376 DESCRIPTION Collector-Emiiter Breakdown Voltage- V = 800V(Min.) (BR)CEO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a ... See More ⇒
Detailed specifications: 2SC3369, 2SC337, 2SC3370, 2SC3371, 2SC3372, 2SC3373, 2SC3374, 2SC3375, A1013, 2SC3377, 2SC3378, 2SC3379, 2SC338, 2SC3380, 2SC3381, 2SC3382, 2SC3382R
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