All Transistors. 2SC3376 Datasheet

 

2SC3376 Datasheet and Replacement


   Type Designator: 2SC3376
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO218
 

 2SC3376 Substitution

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2SC3376 Datasheet (PDF)

 ..1. Size:214K  toshiba
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2SC3376

 ..2. Size:197K  inchange semiconductor
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2SC3376

isc Silicon NPN Power Transistor 2SC3376DESCRIPTION Collector-Emiiter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

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2SC3376

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2SC3376

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Datasheet: 2SC3369 , 2SC337 , 2SC3370 , 2SC3371 , 2SC3372 , 2SC3373 , 2SC3374 , 2SC3375 , 2SD313 , 2SC3377 , 2SC3378 , 2SC3379 , 2SC338 , 2SC3380 , 2SC3381 , 2SC3382 , 2SC3382R .

History: 2SC1198 | 2SB816 | ERS325 | BLX12

Keywords - 2SC3376 transistor datasheet

 2SC3376 cross reference
 2SC3376 equivalent finder
 2SC3376 lookup
 2SC3376 substitution
 2SC3376 replacement

 

 
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