All Transistors. 2SC3376 Datasheet

 

2SC3376 Datasheet and Replacement


   Type Designator: 2SC3376
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO218
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2SC3376 Datasheet (PDF)

 ..1. Size:214K  toshiba
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2SC3376

 ..2. Size:197K  inchange semiconductor
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2SC3376

isc Silicon NPN Power Transistor 2SC3376DESCRIPTION Collector-Emiiter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

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2SC3376

 8.2. Size:1523K  1
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2SC3376

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MMBT4122 | 2N3815 | 2SA1051A | 2SA843 | PEMH16 | 2SB464 | 2N1963

Keywords - 2SC3376 transistor datasheet

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