2SC3376 Datasheet and Replacement
Type Designator: 2SC3376
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO218
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2SC3376 Datasheet (PDF)
2sc3376.pdf

isc Silicon NPN Power Transistor 2SC3376DESCRIPTION Collector-Emiiter Breakdown Voltage-: V = 800V(Min.)(BR)CEOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS (T =25)a
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: MMBT4122 | 2N3815 | 2SA1051A | 2SA843 | PEMH16 | 2SB464 | 2N1963
Keywords - 2SC3376 transistor datasheet
2SC3376 cross reference
2SC3376 equivalent finder
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History: MMBT4122 | 2N3815 | 2SA1051A | 2SA843 | PEMH16 | 2SB464 | 2N1963



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