All Transistors. 2SC3385 Datasheet

 

2SC3385 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3385

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO3

2SC3385 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC3385 Datasheet (PDF)

4.1. 2sc3381.pdf Size:211K _toshiba

2SC3385
2SC3385



4.2. 2sc3382.pdf Size:236K _sanyo

2SC3385
2SC3385

Ordering number:EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions Adoption of FBET process. unit:mm AF amp. 2003A Low-noise use. [2SA1391/2SC3382] Noise Test Circuit JEDEC : TO-92 B : Base ( ) : 2SA1391 EIAJ : SC-43 C : Collector SANYO : NP E : Emitter Specifications Absolute Maximum Ratings at T

 4.3. 2sc3383.pdf Size:173K _sanyo

2SC3385
2SC3385

Ordering number:EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions Adoption of FBET process. unit:mm AF amp. 2003A [2SA1392/2SC3383] JEDEC : TO-92 B : Base ( ) : 2SA1392 EIAJ : SC-43 C : Collector SANYO : NF E : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Uni

4.4. rej03g0713 2sc3380ds-1.pdf Size:76K _renesas

2SC3385
2SC3385

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. 2sc3380.pdf Size:29K _hitachi

2SC3385
2SC3385

2SC3380 Silicon NPN Triple Diffused Application High frequency high voltage amplifier High voltage switch Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SC3380 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Collector curr

4.6. 3sk73 3sk77 2sk240 2sj75 2sk146 2sj73 2sk389 2sj109 2sk266 2sk455 2sk456 2sc3381 2sa1349.pdf Size:150K _no

2SC3385
2SC3385

4.7. 2sc3387.pdf Size:142K _inchange_semiconductor

2SC3385
2SC3385

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3387 DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum

4.8. 2sc3388.pdf Size:196K _inchange_semiconductor

2SC3385
2SC3385

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3388 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO

4.9. 2sc3380.pdf Size:856K _kexin

2SC3385
2SC3385

SMD Type Transistors NPN Transistors 2SC3380 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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