2SC34 Datasheet and Replacement

2SC3429 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3429 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage VCE

2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: V = 0.3 V (max) CE (sat) High speed switching time: t = 15 ns (typ.) stgMaximum Ratings (Ta == 25C) ==Characteristics Symbol R

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Unit: mm Solenoid Drive Applications High DC current gain: hFE = 500 (min) (I = 400 mA) C Low saturation voltage: V = 0.5 V (max) (I = 300 mA) CE (sat) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VColl

2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SA1360 Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-emitt

2SC3405 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 1.0 s (max) t = 1.0 s (max), (I = 0.3 A) f C High collector breakdown voltage: V = 800 V CEOMaximum Ratings (Ta = 25C) Cha

Ordering number:EN1430BNPN Epitaxial Planar Silicon Transistor2SC3495High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AF amplifier, various driver, muting circuit. unit:mm2003AFeatures [2SC3495] Adoption of FBET process. High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-

Ordering number:EN1577BNPN Triple Diffused Planar Silicon Transistor2SC3451500V/15A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3451] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsol

Ordering number:EN1579DNPN Triple Diffused Planar Silicon Transistor2SC3456800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3456] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpec

Ordering number:EN1576CNPN Triple Diffused Planar Silicon Transistor2SC3450500V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3450] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsol

Ordering number:EN1544BNPN Triple Diffused Planar Silicon Transistor2SC3446500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3446] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecif

Ordering number:EN1390DPNP/NPN Epitaxial Planar Silicon Transistors2SA1353/2SC3417Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Color TV chroma output, high-voltage driver appli-2009Bcations.[2SA1353/2SC3417]Features High breakdown voltage : VCEO 300V. Excellent high fr

Ordering number:EN1545BNPN Triple Diffused Planar Silicon Transistor2SC3447500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3447] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecif

Ordering number:EN2487ANPN Triple Diffused Planar Type Silicon Transistor2SC3466Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC3466]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co

Ordering number:EN1572CNPN Triple Diffused Planar Silicon Transistor2SC3449500V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3449] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolu

Ordering number:EN1589CNPN Triple Diffused Planar Type Silicon Transistor2SC3458800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3458] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsA

Ordering number:EN1596CNPN Triple Diffused Planar Type Silicon Transistor2SC3461800V/8A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3461] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsA

Ordering number:EN1412CPNP/NPN Epitaxial Planar Silicon Transistors2SA1370/2SC3467High-Definition CRT Display,Video Output ApplicationsUse Package Dimensions Color TV chroma output and high breakdown voltageunit:mmdriver.2006A[2SA1370/2SC3467]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfrequency charac

Ordering number:EN1413CPNP/NPN Epitaxial Planar Silicon Transistors2SA1371/2SC3468High-Definition CRT Display,Video Output ApplicationsUse Package Dimensions Color TV chroma output and high breakdown voltageunit:mmdriver.2006A[2SA1371/2SC3468]Features High breakdown votage : VCEO 300V. Small reverse transfer capacitance and excellent highfrequency charact

Ordering number:EN1594BNPN Triple Diffused Planar Silicon Transistor2SC3460800V/6A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3460] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolu

Ordering number:EN1411CPNP/NPN Epitaxial Planar Silicon Transistors2SA1352/2SC3416Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Color TV chroma output, high-voltage driverunit:mmapplicatons.2009B[2SA1352/2SC3416]Features High breakdown voltage : VCEO 200V. Small reverse transfer capacitance and excellent highfreq

Ordering number:EN1591CNPN Triple Diffused Planar Silicon Transistor2SC3459800V/4.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3459] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbso

Ordering number:EN1580CNPN Triple Diffused Planar Type Silicon Transistor2SC3457800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3457] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterS

Ordering number:EN1546BNPN Triple Diffused Planar Silicon Transistor2SC3448500V/4A Switching Regulator ApplicationsApplications Package Dimensions Switching regulator. unit:mm2022AFeatures [2SC3448] High breakdown voltage and high reliability. Fast switching speed (tf : 0.1 s typ). Wide ASO. Adoption of MBIT process.1 : Base2 : Collector3 : Emitter

Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.62.8(1) EmitterAbsolute maximum ratings (Ta=25C) (2) Base(3) CollectorParameter Symbol Limits Unit0.3Min.ROHM

2SC4061K / 2SC3415S / 2SC4015TransistorsChroma amplifier transistor (300V, 0.1A)2SC4061K / 2SC3415S / 2SC4015 External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO=300V)2SC4061K2) Low collector output capacitance. (Typ. 3pF at VCB=30V)3) Ideal for chroma circuit.1.62.8(1) Emitter(2) Base(3) Collector0.3Min. Absolute maximum ratings (Ta=25

Power Transistors2SC3496, 2SC3496ASilicon NPN triple diffusion planar typeFor power switchingUnit: mm8.50.2 3.40.36.00.2 1.00.1 Features High-speed switching High collector-base voltage (Emitter open) VCBO0 to 0.4 Satisfactory linearity of forward current transfer ratio hFER = 0.50.80.1 N type package enabling direct soldering of the radiatin

UTC 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS FEATURES 1* High breakdown voltage: VCBO, VCEO300V * Small reverse transfer capacitance and excellent high frequency characteristicF SOT-891: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SC3468LABSOLUTE MAXIMUM RATINGS (Ta = 25)

2SC3470Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3470Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 300 mWJunction temper

2SC3494Silicon NPN Epitaxial PlanarApplicationFM RF/IF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 300 mWJunction temp

2SC3413Silicon NPN EpitaxialApplication Low frequency low noise amplifier HF amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3413Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissip

2SC3415 0.1A , 300V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage G H Low Collector Output Capacitance Ideal for Chroma Circuit EmitterCollectorJBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

http://www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

JMnic Product Specification Silicon NPN Power Transistors 2SC3451 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 500V/15A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sym

JMnic Product Specification Silicon NPN Power Transistors 2SC3456 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASOarea of safe operation APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum

JMnic Product Specification Silicon NPN Power Transistors 2SC3447 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 500V/5A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(

JMnic Product Specification Silicon NPN Power Transistors 2SC3486 DESCRIPTION With TO-3PN package High voltage ,high speed Wide area of safe operation APPLICATIONS For color TV display horizontal output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximu

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3465 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE U

JMnic Product Specification Silicon NPN Power Transistors 2SC3466 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS Switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 E

JMnic Product Specification Silicon NPN Power Transistors 2SC3458 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sy

JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION With TO-126 package High DC current gain Low saturation voltage High collector power dissipation APPLICATIONS Storobo flash applications Medium power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum rat

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3461 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/8A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN)

JMnic Product Specification Silicon NPN Power Transistors 2SC3409 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute m

JMnic Product Specification Silicon NPN Power Transistors 2SC3460 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb

JMnic Product Specification Silicon NPN Power Transistors 2SC3457 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/3A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(

2 3437SC TRANSISTOR (NPN)SOT23 FEATURES High Transition Frequency Low Saturation Voltage 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 15 V V Emitter-Base Voltage 5 V EBOI Collector Current 200 mA CP Collector Power Diss

2SC3420 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features ,, High DC current gain, low saturation voltage,high collector power dissipation. / Applications ,

SMD TypeSMD TypeSMD TypeSMD TypeSMD Type TransistorsSMD Type TransistorsProduct specification2SC3496ATO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh-speed switchingHigh collector-base voltage (Emitter open) VCBO0.127+0.1 max0.80-0.1Satisfactory linearity of forward current transfer ratio hFE+0.12.3 0.60-0.11 Base+0

SMD Type TransistorsNPN Transistors2SC3429SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=70mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collect

SMD Type TransistorsNPN Transistors2SC3437SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=200mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec

SMD Type TransistorsNPN Transistors2SC3440SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Low collector to emitter saturation voltage. Excellent linearity nof DC forward current gain.1 2 Super mini package for easy mounting. +0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1 High collector current. Complementary to 2SA13651.Base2.Emitter

SMD Type TransistorsNPN Transistors2SC3444 Features1.70 0.1 High Voltage High collector current Low collector to emitter saturation voltage High collector dissipation Pc=500mW0.42 0.10.46 0.1 Small package for mounting Complementary to 2SA13641.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsNPN Transistors2SC34431.70 0.1 Features High hFE :hFE=150 to 800 High collector current Low collector to emitter saturation voltage0.42 0.10.46 0.1 High collector dissipation Pc=500mW Small package for mounting1.Base Complementary to 2SA13632.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type TransistorsNPN Transistors2SC34381.70 0.1 Features High Voltage VCEO = 100V High Collector Current (ICM = 800mA) High Collector Dissipation PC = 500mW Small Package For Mounting0.42 0.10.46 0.1 Complementary to 2SA13681.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vo

SMD Type TransistorsNPN Transistors2SC3441SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=400mA1 2 Collector Emitter Voltage VCEO=50V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complementary to 2SA13661.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsNPN Transistors2SC34391.70 0.1 Features High hFE : hFE=400 to 1800 High collector current Low collector to emitter saturation voltage0.42 0.10.46 0.1 High collector dissipation Pc=500mW Small package for mounting1.Base Complementary to 2SA13692.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symb

2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. : V 60-80W 2SA13583CA1358 CEO Features: High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEOto 2SA1358(3CA1358). /Absolute

2SC3422(3DA3422) NPN /SILICON NPN TRANSISTOR Purpose: Audio frequency power amplifier, low speed switching. 5W h 2SA1359(3CA1359) FEFeatures: Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme

2SC3417(3DA3417) NPN /SILICON NPN TRANSISTOR :,/Purpose: High-definition CRT display, color TV chroma output and high breakdown voltage driver. :,/Features: High breakdown voltage, excellent high frequency Characteristic. /Absolute maxi

2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR :, Purpose: Storobo flash applications, medium power amplifier applications. :,, Features: High DC current gain, low saturation voltagehigh collector power dissipation. /Absolute ma

isc Silicon NPN Power Transistor 2SC3482DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3475DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 2ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3451DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistor 2SC3456DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3450DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistor 2SC3424DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V (Min)(BR)CEOComplement to Type 2SA1361Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV chroma output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 V

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

isc Silicon NPN Power Transistor 2SC3481DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3419DESCRIPTIONLow Collector Saturation VoltageHigh power dissipationComplementary to 2SA1356100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3446DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistor 2SC3447DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistor 2SC3486DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3465DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3466DESCRIPTIONHigh Breakdown Voltage-: V = 1200V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3449DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltage and high reliabilityFast switching speedWide ASONPN triple diffused planar silicon transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator ap

isc Silicon NPN Power Transistor 2SC3479DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3480DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3462DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3412DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vol

isc Silicon NPN Power Transistor 2SC3458DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3423DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOComplement to Type 2SA1360Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3420DESCRIPTIONHigh Collector Current-I = 5.0ACDC Current Gain-: h = 70(Min)@I = 4AFE CLow Saturation Voltage: V = 1.0V(Max)@I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Medium power amplifier applications.

isc Silicon NPN Power Transistor 2SC3461DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon NPN Power Transistor 2SC3422DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 40V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1359Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierLow speed switchingSuitable for output stage of 5 watts car radio and car stere

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3409DESCRIPTIONLow Collector Saturation Voltage100% avalanche testedGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SC3416DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 200V (Min)(BR)CEOComplement to Type 2SA1352Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, high-voltage driverapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SC3460DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3459DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3421DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOComplement to Type 2SA1358Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Suitable for driver of 60 to 80 Watts audio amplifier.ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC3457DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SC3448DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO