2SC34 datasheet, аналоги, основные параметры
Наименование производителя: 2SC34 📄📄
Тип материала: Ge
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.14 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.25 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 3.5 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: R27
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Аналоги (замена) для 2SC34
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2SC34 даташит
2sc3429.pdf
2SC3429 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3429 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.5dB, S 2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, S 2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCE
2sc3437.pdf
2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Unit mm Computer, Counter Applications High transition frequency fT = 400 MHz (typ.) Low saturation voltage V = 0.3 V (max) CE (sat) High speed switching time t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol R
2sc3474.pdf
2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Unit mm Solenoid Drive Applications High DC current gain hFE = 500 (min) (I = 400 mA) C Low saturation voltage V = 0.5 V (max) (I = 300 mA) CE (sat) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Coll
2sc3423.pdf
2SC3423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications Unit mm Complementary to 2SA1360 Small collector output capacitance Cob = 1.8 pF (typ.) High transition frequency fT = 200 MHz (typ.) Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitt
2sc3405.pdf
2SC3405 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405 Industrial Applications Switching Regulator and High Voltage Switching Unit mm Applications High Speed DC-DC Converter Applications Excellent switching times tr = 1.0 s (max) t = 1.0 s (max), (I = 0.3 A) f C High collector breakdown voltage V = 800 V CEO Maximum Ratings (Ta = 25 C) Cha
2sc3495.pdf
Ordering number EN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF amplifier, various driver, muting circuit. unit mm 2003A Features [2SC3495] Adoption of FBET process. High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-
2sc3451.pdf
Ordering number EN1577B NPN Triple Diffused Planar Silicon Transistor 2SC3451 500V/15A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3451] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absol
2sc3456.pdf
Ordering number EN1579D NPN Triple Diffused Planar Silicon Transistor 2SC3456 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3456] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Spec
2sc3450.pdf
Ordering number EN1576C NPN Triple Diffused Planar Silicon Transistor 2SC3450 500V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3450] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absol
2sc3446.pdf
Ordering number EN1544B NPN Triple Diffused Planar Silicon Transistor 2SC3446 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3446] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specif
2sa1353 2sc3417.pdf
Ordering number EN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Color TV chroma output, high-voltage driver appli- 2009B cations. [2SA1353/2SC3417] Features High breakdown voltage VCEO 300V. Excellent high fr
2sc3447.pdf
Ordering number EN1545B NPN Triple Diffused Planar Silicon Transistor 2SC3447 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3447] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specif
2sc3466.pdf
Ordering number EN2487A NPN Triple Diffused Planar Type Silicon Transistor 2SC3466 Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC3466] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Co
2sc3449.pdf
Ordering number EN1572C NPN Triple Diffused Planar Silicon Transistor 2SC3449 500V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3449] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolu
2sc3458.pdf
Ordering number EN1589C NPN Triple Diffused Planar Type Silicon Transistor 2SC3458 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3458] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications A
2sc3461.pdf
Ordering number EN1596C NPN Triple Diffused Planar Type Silicon Transistor 2SC3461 800V/8A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3461] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications A
2sa1370 2sc3467.pdf
Ordering number EN1412C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1370/2SC3467 High-Definition CRT Display, Video Output Applications Use Package Dimensions Color TV chroma output and high breakdown voltage unit mm driver. 2006A [2SA1370/2SC3467] Features High breakdown voltage VCEO 200V. Small reverse transfer capacitance and excellent high frequency charac
2sa1371 2sc3468.pdf
Ordering number EN1413C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use Package Dimensions Color TV chroma output and high breakdown voltage unit mm driver. 2006A [2SA1371/2SC3468] Features High breakdown votage VCEO 300V. Small reverse transfer capacitance and excellent high frequency charact
2sc3460.pdf
Ordering number EN1594B NPN Triple Diffused Planar Silicon Transistor 2SC3460 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3460] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolu
2sa1352 2sc3416.pdf
Ordering number EN1411C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1352/2SC3416 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Color TV chroma output, high-voltage driver unit mm applicatons. 2009B [2SA1352/2SC3416] Features High breakdown voltage VCEO 200V. Small reverse transfer capacitance and excellent high freq
2sc3459.pdf
Ordering number EN1591C NPN Triple Diffused Planar Silicon Transistor 2SC3459 800V/4.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3459] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Abso
2sc3457.pdf
Ordering number EN1580C NPN Triple Diffused Planar Type Silicon Transistor 2SC3457 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3457] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter S
2sc3448.pdf
Ordering number EN1546B NPN Triple Diffused Planar Silicon Transistor 2SC3448 500V/4A Switching Regulator Applications Applications Package Dimensions Switching regulator. unit mm 2022A Features [2SC3448] High breakdown voltage and high reliability. Fast switching speed (tf 0.1 s typ). Wide ASO. Adoption of MBIT process. 1 Base 2 Collector 3 Emitter
2sc4061k 2sc3415s 2sc4015.pdf
Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 Features Dimensions (Unit mm) 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter Absolute maximum ratings (Ta=25 C) (2) Base (3) Collector Parameter Symbol Limits Unit 0.3Min. ROHM
2sc3415s.pdf
2SC4061K / 2SC3415S / 2SC4015 Transistors Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 External dimensions (Units mm) Features 1) High breakdown voltage. (BVCEO=300V) 2SC4061K 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 2.8 (1) Emitter (2) Base (3) Collector 0.3Min. Absolute maximum ratings (Ta=25
2sc3496.pdf
Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit mm 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Features High-speed switching High collector-base voltage (Emitter open) VCBO 0 to 0.4 Satisfactory linearity of forward current transfer ratio hFE R = 0.5 0.8 0.1 N type package enabling direct soldering of the radiatin
2sc3468.pdf
UTC 2SC3468 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FOR VIDEO OUTPUT OF HIGH-DEFINITION CRT DISPLAYS FEATURES 1 * High breakdown voltage VCBO, VCEO 300V * Small reverse transfer capacitance and excellent high frequency characteristicF SOT-89 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 2SC3468L ABSOLUTE MAXIMUM RATINGS (Ta = 25 )
2sc3470.pdf
2SC3470 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temper
2sc3494.pdf
2SC3494 Silicon NPN Epitaxial Planar Application FM RF/IF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3494 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 300 mW Junction temp
2sc3413.pdf
2SC3413 Silicon NPN Epitaxial Application Low frequency low noise amplifier HF amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3413 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissip
2sc3415.pdf
2SC3415 0.1A , 300V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage G H Low Collector Output Capacitance Ideal for Chroma Circuit Emitter Collector J Base A D CLASSIFICATION OF hFE Millimeter B REF. Product-Rank 2SC
2sc3440.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sc3444.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc3443.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc3438.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc3439.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc3451.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3451 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 500V/15A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sym
2sc3456.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3456 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO area of safe operation APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum
2sc3447.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3447 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 500V/5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(
2sc3486.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3486 DESCRIPTION With TO-3PN package High voltage ,high speed Wide area of safe operation APPLICATIONS For color TV display horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximu
2sc3465.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3465 DESCRIPTION With TO-3 package High voltage Fast switching speed APPLICATIONS For switching regulator applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc3466.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3466 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS Switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 E
2sc3458.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3458 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sy
2sc3423.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sc3420.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3420 DESCRIPTION With TO-126 package High DC current gain Low saturation voltage High collector power dissipation APPLICATIONS Storobo flash applications Medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum rat
2sc3461.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3461 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/8A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN)
2sc3409.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3409 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute m
2sc3460.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3460 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb
2sc3457.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3457 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/3A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(
2sc3437.pdf
2 3437 SC TRANSISTOR (NPN) SOT 23 FEATURES High Transition Frequency Low Saturation Voltage 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 40 V CBO VCEO Collector-Emitter Voltage 15 V V Emitter-Base Voltage 5 V EBO I Collector Current 200 mA C P Collector Power Diss
2sc3496a.pdf
SMD Type SMD Type SMD Type SMD Type SMD Type Transistors SMD Type Transistors Product specification 2SC3496A TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High-speed switching High collector-base voltage (Emitter open) VCBO 0.127 +0.1 max 0.80-0.1 Satisfactory linearity of forward current transfer ratio hFE +0.1 2.3 0.60-0.1 1 Base +0
2sc3429.pdf
SMD Type Transistors NPN Transistors 2SC3429 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=70mA 1 2 Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 17 Collect
2sc3437.pdf
SMD Type Transistors NPN Transistors 2SC3437 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=200mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec
2sc3440.pdf
SMD Type Transistors NPN Transistors 2SC3440 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Low collector to emitter saturation voltage. Excellent linearity nof DC forward current gain. 1 2 Super mini package for easy mounting. +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 High collector current. Complementary to 2SA1365 1.Base 2.Emitter
2sc3444.pdf
SMD Type Transistors NPN Transistors 2SC3444 Features 1.70 0.1 High Voltage High collector current Low collector to emitter saturation voltage High collector dissipation Pc=500mW 0.42 0.1 0.46 0.1 Small package for mounting Complementary to 2SA1364 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
2sc3443.pdf
SMD Type Transistors NPN Transistors 2SC3443 1.70 0.1 Features High hFE hFE=150 to 800 High collector current Low collector to emitter saturation voltage 0.42 0.1 0.46 0.1 High collector dissipation Pc=500mW Small package for mounting 1.Base Complementary to 2SA1363 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol
2sc3438.pdf
SMD Type Transistors NPN Transistors 2SC3438 1.70 0.1 Features High Voltage VCEO = 100V High Collector Current (ICM = 800mA) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SA1368 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Vo
2sc3441.pdf
SMD Type Transistors NPN Transistors 2SC3441 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=400mA 1 2 Collector Emitter Voltage VCEO=50V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Complementary to 2SA1366 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector
2sc3439.pdf
SMD Type Transistors NPN Transistors 2SC3439 1.70 0.1 Features High hFE hFE=400 to 1800 High collector current Low collector to emitter saturation voltage 0.42 0.1 0.46 0.1 High collector dissipation Pc=500mW Small package for mounting 1.Base Complementary to 2SA1369 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symb
2sc3421 3da3421.pdf
2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier applications. V 60-80W 2SA1358 3CA1358 CEO Features High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEO to 2SA1358(3CA1358). /Absolute
2sc3422 3da3422.pdf
2SC3422(3DA3422) NPN /SILICON NPN TRANSISTOR Purpose Audio frequency power amplifier, low speed switching. 5W h 2SA1359(3CA1359) FE Features Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme
2sc3417 3da3417.pdf
2SC3417(3DA3417) NPN /SILICON NPN TRANSISTOR , /Purpose High-definition CRT display, color TV chroma output and high breakdown voltage driver. , /Features High breakdown voltage, excellent high frequency Characteristic. /Absolute maxi
2sc3420 3da3420.pdf
2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR , Purpose Storobo flash applications, medium power amplifier applications. , , Features High DC current gain, low saturation voltage high collector power dissipation. /Absolute ma
2sc3482.pdf
isc Silicon NPN Power Transistor 2SC3482 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sc3475.pdf
isc Silicon NPN Power Transistor 2SC3475 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 2A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
2sc3451.pdf
isc Silicon NPN Power Transistor 2SC3451 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sc3456.pdf
isc Silicon NPN Power Transistor 2SC3456 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
2sc3450.pdf
isc Silicon NPN Power Transistor 2SC3450 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sc3424.pdf
isc Silicon NPN Power Transistor 2SC3424 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V (Min) (BR)CEO Complement to Type 2SA1361 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V
2sc3423-126.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3423 DESCRIPTION With TO-126 package Complement to type 2SA1360 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION
2sc3481.pdf
isc Silicon NPN Power Transistor 2SC3481 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sc3419.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3419 DESCRIPTION Low Collector Saturation Voltage High power dissipation Complementary to 2SA1356 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U
2sc3446.pdf
isc Silicon NPN Power Transistor 2SC3446 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sc3447.pdf
isc Silicon NPN Power Transistor 2SC3447 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sc3486.pdf
isc Silicon NPN Power Transistor 2SC3486 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sc3465.pdf
isc Silicon NPN Power Transistor 2SC3465 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
2sc3466.pdf
isc Silicon NPN Power Transistor 2SC3466 DESCRIPTION High Breakdown Voltage- V = 1200V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
2sc3449.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3449 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage and high reliability Fast switching speed Wide ASO NPN triple diffused planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator ap
2sc3479.pdf
isc Silicon NPN Power Transistor 2SC3479 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sc3480.pdf
isc Silicon NPN Power Transistor 2SC3480 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sc3462.pdf
isc Silicon NPN Power Transistor 2SC3462 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
2sc3412.pdf
isc Silicon NPN Power Transistor 2SC3412 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vol
2sc3458.pdf
isc Silicon NPN Power Transistor 2SC3458 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
2sc3423.pdf
isc Silicon NPN Power Transistor 2SC3423 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Complement to Type 2SA1360 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
2sc3420.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3420 DESCRIPTION High Collector Current-I = 5.0A C DC Current Gain- h = 70(Min)@I = 4A FE C Low Saturation Voltage V = 1.0V(Max)@I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe flash applications. Medium power amplifier applications.
2sc3461.pdf
isc Silicon NPN Power Transistor 2SC3461 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sc3422.pdf
isc Silicon NPN Power Transistor 2SC3422 DESCRIPTION Collector-Emitter Breakdown Voltage V = 40V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1359 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stage of 5 watts car radio and car stere
2sc3409.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3409 DESCRIPTION Low Collector Saturation Voltage 100% avalanche tested Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sc3416.pdf
isc Silicon NPN Power Transistor 2SC3416 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO Complement to Type 2SA1352 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V
2sc3460.pdf
isc Silicon NPN Power Transistor 2SC3460 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
2sc3459.pdf
isc Silicon NPN Power Transistor 2SC3459 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
2sc3421.pdf
isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 120V(Min) (BR)CEO Complement to Type 2SA1358 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATI
2sc3457.pdf
isc Silicon NPN Power Transistor 2SC3457 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas
2sc3448.pdf
isc Silicon NPN Power Transistor 2SC3448 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
Другие транзисторы: 2SC3393T, 2SC3393U, 2SC3394, 2SC3395, 2SC3396, 2SC3397, 2SC3398, 2SC3399, BD139, 2SC340, 2SC3400, 2SC3401, 2SC3402, 2SC3403, 2SC3404, 2SC3405, 2SC3406
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History: MJE4922 | BD538A | FCX653
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
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