All Transistors. 2SC3421Y Datasheet

 

2SC3421Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3421Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: ISO126

 2SC3421Y Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3421Y Datasheet (PDF)

 7.1. Size:176K  toshiba
2sc3421.pdf

2SC3421Y 2SC3421Y

 7.2. Size:292K  foshan
2sc3421 3da3421.pdf

2SC3421Y 2SC3421Y

2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. : V 60-80W 2SA13583CA1358 CEO Features: High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEOto 2SA1358(3CA1358). /Absolute

 7.3. Size:217K  inchange semiconductor
2sc3421.pdf

2SC3421Y 2SC3421Y

isc Silicon NPN Power Transistor 2SC3421DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOComplement to Type 2SA1358Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Suitable for driver of 60 to 80 Watts audio amplifier.ABSOLUTE MAXIMUM RATI

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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