All Transistors. 2N1999 Datasheet

 

2N1999 Datasheet and Replacement


   Type Designator: 2N1999
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO5
      - BJT Cross-Reference Search

   

2N1999 Datasheet (PDF)

 9.1. Size:11K  semelab
2n1991.pdf pdf_icon

2N1999

2N1991Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 20V dia.IC = 0.3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

Datasheet: 2N1991S , 2N1992 , 2N1993 , 2N1994 , 2N1995 , 2N1996 , 2N1997 , 2N1998 , KTB688 , 2N200 , 2N2000 , 2N2001 , 2N2002 , 2N2003 , 2N2004 , 2N2005 , 2N2006 .

History: 2SA1196 | 2N1337 | 2N5467 | 2N1263 | 2N4931 | 2N5487-3

Keywords - 2N1999 transistor datasheet

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