2N1999 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1999
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N1999 Transistor Equivalent Substitute - Cross-Reference Search
2N1999 Datasheet (PDF)
9.1. Size:11K semelab
2n1991.pdf
2n1991.pdf
2N1991Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 20V dia.IC = 0.3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
Datasheet: 2N1991S , 2N1992 , 2N1993 , 2N1994 , 2N1995 , 2N1996 , 2N1997 , 2N1998 , 2SD1555 , 2N200 , 2N2000 , 2N2001 , 2N2002 , 2N2003 , 2N2004 , 2N2005 , 2N2006 .
