All Transistors. 2SC3475O Datasheet

 

2SC3475O Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3475O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 70 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO220

 2SC3475O Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3475O Datasheet (PDF)

 7.1. Size:201K  inchange semiconductor
2sc3475.pdf

2SC3475O 2SC3475O

isc Silicon NPN Power Transistor 2SC3475DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 2ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 8.1. Size:302K  toshiba
2sc3474.pdf

2SC3475O 2SC3475O

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Industrial Applications Switching Applications Unit: mm Solenoid Drive Applications High DC current gain: hFE = 500 (min) (I = 400 mA) C Low saturation voltage: V = 0.5 V (max) (I = 300 mA) CE (sat) CMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VColl

 8.2. Size:163K  nec
2sc3478 2sc3478 2sc3478a.pdf

2SC3475O 2SC3475O

 8.3. Size:24K  hitachi
2sc3470.pdf

2SC3475O 2SC3475O

2SC3470Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineSPAK1. Emitter122. Collector33. Base2SC3470Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 300 mWJunction temper

 8.4. Size:200K  inchange semiconductor
2sc3479.pdf

2SC3475O 2SC3475O

isc Silicon NPN Power Transistor 2SC3479DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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