2SC3502E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3502E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
2SC3502E Transistor Equivalent Substitute - Cross-Reference Search
2SC3502E Datasheet (PDF)
2sc3502.pdf
Ordering number:EN1425CPNP/NPN Epitaxial Planar Silicon Transistors2SA1380/2SC3502Ultrahigh-Definition CRT Display,Video Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent2009Bhigh-frequnecy characteristics[2SA1380/2SC3502]: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoptio
2sc3502 3da3502.pdf
2SC3502(3DA3502) NPN /SILICON NPN TRANSISTOR : CRT Purpose: Ultrahigh-definition CRT display, video output applications. :,, Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolute maxim
2sc3502.pdf
isc Silicon NPN Power Transistor 2SC3502DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 200 V(BR)CEOComplement to Type 2SA1380Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display, video out-put applicaitonsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Datasheet: 2SC3499 , 2SC35 , 2SC350 , 2SC3500 , 2SC3501 , 2SC3502 , 2SC3502C , 2SC3502D , 2N2222 , 2SC3502F , 2SC3503 , 2SC3503C , 2SC3503D , 2SC3503E , 2SC3503F , 2SC3504 , 2SC3504D .
