2SC3510 Datasheet and Replacement

2SC3127, 2SC3128, 2SC3510Silicon NPN EpitaxialApplicationUHF/VHF wide band amplifierOutlineMPAK 2SC3127311. Emitter2. Base23. Collector2SC3127, 2SC3128, 2SC3510TO-92 (2) 2SC3128, 2SC35101. Base2. Emitter3. Collector321Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC3127*1 2SC3128 2SC3510 UnitCollector to base voltage VCBO 20 20 20 VCollector t

2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = 300 V, V = 300 V CEO Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacitance: C = 3 pF (typ.)

2SC3513Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC3513Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 150 mWJunction t

2SC3512Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC3512Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC 600 mWJunct

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LAPT 2SC3519/3519ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions MT-100(TO3P)RatingsRatingsSymbol UnitSymbol Conditions Unit2SC3519 2SC3519A2SC3519 2SC3519A0.24.80.415.6VCBO 0.1160 180 V 100max A 9.6

RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen

RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen

SMD Type TransistorsNPN Transistors2SC3515SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

SMD Type TransistorsNPN Transistors2SC3513SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=11V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

SMD Type TransistorsNPN Transistors 2SC3518-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High DC current gain Low saturation voltage0.127 Complementary to 2SA1385-Z+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbo

isc Silicon NPN Power Transistors 2SC3519/ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3519(BR)CEO= 180V(Min)-2SC3519AGood Linearity of hFEComplement to Type 2SA1386/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3512DESCRIPTIONLow Noise and High GainNF = 1.6 dB TYP. @f = 900 MHzPG = 10.5 dB TYP. @f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low-noise and small signal amplifiersfrom VHF ~ UHF band.ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor 2SC3518-ZDESCRIPTIONLow collector saturation voltageHigh DC current gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for audio frequency amplifier andswitching especially in hybrid integrated circuitsABSOLUTE MAXIMUM RATINGS(T =25)aS

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U

isc Silicon NPN Power Transistor 2SC3514DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAdudio frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

isc Silicon NPN Power Transistor 2SC3518DESCRIPTIONLow collector saturation voltageHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis transistor is ideal for audio frequency amplifier andswitching especially in hybrid integrated circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT