All Transistors. 2SC3519A Datasheet

 

2SC3519A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC3519A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 180 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO218

 2SC3519A Transistor Equivalent Substitute - Cross-Reference Search

   

2SC3519A Datasheet (PDF)

 ..1. Size:138K  mospec
2sc3519a.pdf

2SC3519A
2SC3519A

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 ..2. Size:203K  inchange semiconductor
2sc3519 2sc3519a.pdf

2SC3519A
2SC3519A

isc Silicon NPN Power Transistors 2SC3519/ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3519(BR)CEO= 180V(Min)-2SC3519AGood Linearity of hFEComplement to Type 2SA1386/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25

 7.1. Size:28K  sanken-ele
2sc3519.pdf

2SC3519A

LAPT 2SC3519/3519ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)External Dimensions MT-100(TO3P)RatingsRatingsSymbol UnitSymbol Conditions Unit2SC3519 2SC3519A2SC3519 2SC3519A0.24.80.415.6VCBO 0.1160 180 V 100max A 9.6

 7.2. Size:217K  nell
2sc3519b-a.pdf

2SC3519A
2SC3519A

RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen

 7.3. Size:217K  nell
2sc3519b.pdf

2SC3519A
2SC3519A

RoHS 2SC3519B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN Epitaxial Planar Transistor(Complement to type 2SA1386B)15A/160V, 180V/130W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stageC Complemen

 7.4. Size:238K  inchange semiconductor
2sc3519 a.pdf

2SC3519A
2SC3519A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE U

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC5820

 

 
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