2SC353 Datasheet. Specs and Replacement
Type Designator: 2SC353 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 85 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: TO5
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2SC353 datasheet
/ e c d cle stage. n e a u n n i e t t n n i o a c maintenance type s planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d cle stage. n e a u n n i e t t n n i o... See More ⇒
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2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 600 mW Junct... See More ⇒
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JMnic Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC3506 DESCRIPTION With TO-3PFa package High-speed switching High collector-base voltage VCBO Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYM... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC3505 DESCRIPTION With TO-3PN package High voltage ,high reliability High speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified... See More ⇒
LAPT 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SC3519 2SC3519A 2SC3519 2SC3519A 0.2 4.8 0.4 15.6 VCBO 0.1 160 180 V 100max A 9.6 ... See More ⇒
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SMD Type Transistors NPN Transistors 2SC3515 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag... See More ⇒
SMD Type Transistors NPN Transistors 2SC3585 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=35mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect... See More ⇒
SMD Type Transistors NPN Transistors 2SC3554 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag... See More ⇒
SMD Type Transistors NPN Transistors 2SC3513 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=11V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec... See More ⇒
SMD Type Transistors NPN Transistors 2SC3545 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect... See More ⇒
SMD Type Transistors NPN Transistors 2SC3518-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High DC current gain Low saturation voltage 0.127 Complementary to 2SA1385-Z +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbo... See More ⇒
SMD Type Transistors NPN Transistors 2SC3547A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec... See More ⇒
SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3588-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High voltage VCEO=400V 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 500 V Collector t... See More ⇒
SMD Type Transistors NPN Transistors 2SC3583 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=65mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle... See More ⇒
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isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3519 (BR)CEO = 180V(Min)-2SC3519A Good Linearity of h FE Complement to Type 2SA1386/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
isc Silicon NPN Power Transistor 2SC3577 DESCRIPTION High Collector-Base Breakdown Voltage- V = 850V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒
isc Silicon NPN Power Transistor 2SC3566 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM... See More ⇒
isc Silicon NPN RF Transistor 2SC3585 DESCRIPTION Collector Current I = 35mA C Collector-Emitter Breakdown Voltage- V = 10V(Min) (BR)CEO High gain 2 S21e = 5.5 dB (typical) ( I =5mA,f=2GHz) C Gain bandwidth product fT = 10 GHZ (typical) (I =10mA,f=1GH) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design... See More ⇒
isc Silicon NPN Power Transistors 2SC3591 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
isc Silicon NPN Power Transistor 2SC3570 DESCRIPTION Collector-Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE M... See More ⇒
isc Silicon NPN Power Transistor 2SC3571 DESCRIPTION Collector-Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE M... See More ⇒
isc Silicon NPN Power Transistor 2SC3527 DESCRIPTION Low Collector Saturation Voltage High Collector Current Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒
isc Silicon NPN Power Transistor 2SC3507 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
isc Silicon NPN Power Transistor 2SC3506 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1000V(Min) (BR)CBO High Switching Speed APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-B... See More ⇒
isc Silicon NPN Power Transistors 2SC3590 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3512 DESCRIPTION Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF UHF band. ABSOLUTE MAXIMUM RATIN... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3545 DESCRIPTION Low Base Time Constant; r = 4 ps TYP. bb CC High Gain Bandwidth Product fT= 2 GHz TYP. @ I = -5mA, V = 10V E CE Low Feedback Capacitance; C = 0.48 pF TYP. re 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ... See More ⇒
isc Silicon NPN Power Transistor 2SC3518-Z DESCRIPTION Low collector saturation voltage High DC current gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
isc Silicon NPN Power Transistor 2SC3550 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI... See More ⇒
isc Silicon NPN Power Transistor 2SC3565 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATI... See More ⇒
isc Silicon NPN Power Transistor 2SC3502 DESCRIPTION Collector Emitter Breakdown Voltage V = 200 V (BR)CEO Complement to Type 2SA1380 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
isc Silicon NPN Power Transistor 2SC3588 DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 300mA CE(sat) C High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Complement to Type 2SA1400 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high Voltage switching applications ABSOLUTE MAXIMUM... See More ⇒
isc Silicon NPN Power Transistor 2SC3540 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Complement to Type 2SA1388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3582 DESCRIPTION Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f... See More ⇒
isc Silicon NPN Power Transistors 2SC3549 DESCRIPTION High Voltage High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solids state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
isc Silicon NPN Power Transistor 2SC3561 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3569 DESCRIPTION Low Collector Saturation Voltage High switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for high voltage,high speed and high power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
isc Silicon NPN Power Transistor 2SC3505 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 700V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A Good Linearity of hFE Complement to Type 2SA1386/A APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE U... See More ⇒
isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION High Breakdown Voltage High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1100 V CBO V Co... See More ⇒
isc Silicon NPN Power Transistor 2SC3568 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1396 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3544 DESCRIPTION Low Base Time Constant; r = 5 ps TYP. bb CC High Gain Bandwidth Product fT= 2 GHz TYP. @ I = 5mA, V = 10V E CE Low Feedback Capacitance; C = 0.55 pF TYP. re 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for u... See More ⇒
isc Silicon NPN Power Transistor 2SC3557 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM ... See More ⇒
isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 450V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
isc Silicon NPN Power Transistor 2SC3588-Z DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 300mA CE(sat) C High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Complement to Type 2SA1400-Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high Voltage switching applications ABSOLUTE MAX... See More ⇒
isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect... See More ⇒
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528 DESCRIPTION With TO-3PFa package High collector current Low saturation voltage APPLICATIONS For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS V... See More ⇒
isc Silicon NPN Power Transistor 2SC3518 DESCRIPTION Low collector saturation voltage High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
isc Silicon NPN Power Transistor 2SC3551 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI... See More ⇒
isc Silicon NPN Power Transistor 2SC3528 DESCRIPTION Low Collector Saturation Voltage High Collector Current Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒
isc Silicon NPN Power Transistor 2SC3559 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3547 DESCRIPTION High Current-Gain Bandwidth Product f = 4 GHz TYP. @ V = 10 V,I = 5 mA T CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner, UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
isc Silicon NPN RF Transistor 2SC3583 DESCRIPTION Low Noise and High Gain NF = 1.2 dB TYP., G = 11 dB TYP. a @V = 8 V, I = 7 mA, f = 1.0 GHz CE C High Power Gain MAG = 15dB TYP. @V = 8V, I = 20 mA, f = 1.0 GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at VHF, UHF and CATV band. AB... See More ⇒
Detailed specifications: 2SC3523, 2SC3524, 2SC3525, 2SC3526, 2SC3527, 2SC3528, 2SC3529, 2SC352A, 2SD2499, 2SC3531, 2SC3532, 2SC3533, 2SC3534, 2SC3535, 2SC3536, 2SC3537, 2SC3538
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BJT Parameters and How They Relate
History: STC03DE170HP | 2SB231 | MMUN2232LT1 | ECG107 | MMUN2231LT1 | UN6110Q | US6X7
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