2SC3540Y Datasheet. Specs and Replacement
Type Designator: 2SC3540Y 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO220
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2SC3540Y datasheet
7.1. Size:201K inchange semiconductor
2sc3540.pdf 
isc Silicon NPN Power Transistor 2SC3540 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Complement to Type 2SA1388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒
8.1. Size:288K toshiba
2sc3547a.pdf
2SC3547A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3... See More ⇒
8.2. Size:289K toshiba
2sc3547b.pdf
2SC3547B TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547B TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3... See More ⇒
8.4. Size:98K nec
2sc3545.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS (Units mm) UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against 2.8 0.2 any change of th... See More ⇒
8.5. Size:58K nec
2sc3545 2sc4184 ne94430 ne94433.pdf
NPN SILICON NE944 OSCILLATOR AND MIXER TRANSISTOR SERIES DESCRIPTION FEATURES The NE944 series of NPN silicon epitaxial bipolar transistors LOW COST is intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT mixer applications. It is suitable for automotive keyless entry fT = 2000 MHz TYP and TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTAN... See More ⇒
8.6. Size:129K fuji
2sc3549.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒
8.7. Size:1218K kexin
2sc3545.pdf
SMD Type Transistors NPN Transistors 2SC3545 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect... See More ⇒
8.8. Size:1044K kexin
2sc3547a.pdf
SMD Type Transistors NPN Transistors 2SC3547A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec... See More ⇒
8.9. Size:186K inchange semiconductor
2sc3545.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3545 DESCRIPTION Low Base Time Constant; r = 4 ps TYP. bb CC High Gain Bandwidth Product fT= 2 GHz TYP. @ I = -5mA, V = 10V E CE Low Feedback Capacitance; C = 0.48 pF TYP. re 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ... See More ⇒
8.10. Size:194K inchange semiconductor
2sc3549.pdf
isc Silicon NPN Power Transistors 2SC3549 DESCRIPTION High Voltage High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solids state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
8.11. Size:181K inchange semiconductor
2sc3544.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3544 DESCRIPTION Low Base Time Constant; r = 5 ps TYP. bb CC High Gain Bandwidth Product fT= 2 GHz TYP. @ I = 5mA, V = 10V E CE Low Feedback Capacitance; C = 0.55 pF TYP. re 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for u... See More ⇒
8.12. Size:179K inchange semiconductor
2sc3547.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3547 DESCRIPTION High Current-Gain Bandwidth Product f = 4 GHz TYP. @ V = 10 V,I = 5 mA T CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner, UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
Detailed specifications: 2SC3536, 2SC3537, 2SC3538, 2SC3539, 2SC353A, 2SC354, 2SC3540, 2SC3540O, D209L, 2SC3541, 2SC3542, 2SC3544, 2SC3545, 2SC3546, 2SC3547, 2SC3547A, 2SC3547B
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