2SC3591 Specs and Replacement
Type Designator: 2SC3591
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220
2SC3591 Substitution
- BJT ⓘ Cross-Reference Search
2SC3591 datasheet
isc Silicon NPN Power Transistors 2SC3591 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Fast Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Ordering number EN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1405/2SC3599] Wide-band amp. Features High fT fT typ=500MHz. High breakdown voltage VCEO... See More ⇒
Ordering number EN1756B NPN Epitaxial Planar Silicon Transistor 2SC3595 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output driver. 2009B Wideband amplifiers. [2SC3595] Features High fT fT typ=2.0GHz. High current IC=500mA. 1 Emitter 2 Collector 3 Base JE... See More ⇒
Detailed specifications: 2SC3583, 2SC3584, 2SC3585, 2SC3586, 2SC3587, 2SC3588, 2SC3589, 2SC3590, TIP42C, 2SC3592, 2SC3593, 2SC3594, 2SC3595, 2SC3596, 2SC3596C, 2SC3596D, 2SC3596E
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