All Transistors. 2SC362 Datasheet

 

2SC362 Datasheet and Replacement


   Type Designator: 2SC362
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.04 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 75 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: TO92
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2SC362 Datasheet (PDF)

 0.1. Size:206K  toshiba
2sc3621.pdf pdf_icon

2SC362

 0.2. Size:212K  toshiba
2sc3620.pdf pdf_icon

2SC362

 0.3. Size:128K  nec
2sc3623 2sc3623a.pdf pdf_icon

2SC362

DATA SHEETSILICON TRANSISTORS2SC3623, 3623ANPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3623)VEBO: 15 V (2SC3623A)ABSOLUTE MAXIMUM RATINGS (Ta = 25C

 0.4. Size:101K  nec
2sc3622 2sc3622a.pdf pdf_icon

2SC362

DATA SHEETSILICON TRANSISTORS2SC3622, 3622ANPN SILICON EPITAXIAL TRANSISTORFOR LOWFREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3622)VEBO: 15 V (2SC3622A)ABSOLUTE MAXIMUM RATINGS (Ta = 25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MPS8099RLRPG | FJN4302R | BT2944 | CTP3551 | 2N5811 | 2SC1558 | KTA1385D

Keywords - 2SC362 transistor datasheet

 2SC362 cross reference
 2SC362 equivalent finder
 2SC362 lookup
 2SC362 substitution
 2SC362 replacement

 

 
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