2SC3622 Specs and Replacement
Type Designator: 2SC3622
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector Current |Ic max|: 0.15
A
Max. Operating Junction Temperature (Tj): 125
°C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package:
TO92
-
BJT ⓘ Cross-Reference Search
2SC3622 detailed specifications
8.3. Size:128K nec
2sc3623 2sc3623a.pdf 
DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High hFE hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat) VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO VEBO 12 V (2SC3623) VEBO 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C... See More ⇒
8.6. Size:1169K kexin
2sc3624.pdf
SMD Type Transistors NPN Transistors 2SC3624 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll... See More ⇒
8.7. Size:1199K kexin
2sc3624a.pdf
SMD Type Transistors NPN Transistors 2SC3624A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Col... See More ⇒
8.8. Size:196K inchange semiconductor
2sc3627.pdf
isc Silicon NPN Power Transistor 2SC3627 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
8.9. Size:195K inchange semiconductor
2sc3626.pdf
isc Silicon NPN Power Transistor 2SC3626 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
8.10. Size:211K inchange semiconductor
2sc3621.pdf
isc Silicon NPN Power Transistor 2SC3621 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Complementary to 2SA1408 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vert.deflection output application Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
Detailed specifications: 2SC3615
, 2SC3616
, 2SC3617
, 2SC3618
, 2SC3619
, 2SC362
, 2SC3620
, 2SC3621
, TIP142
, 2SC3622A
, 2SC3623
, 2SC3623A
, 2SC3624
, 2SC3624A
, 2SC3625
, 2SC3626
, 2SC3627
.
History: MJE703G
| BUX25S
| 2N4050
Keywords - 2SC3622 transistor specs
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