All Transistors. 2SC3622A Datasheet

 

2SC3622A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC3622A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 125 °C

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO92

2SC3622A Transistor Equivalent Substitute - Cross-Reference Search

 

2SC3622A Datasheet (PDF)

1.1. 2sc3622 2sc3622a.pdf Size:101K _nec

2SC3622A
2SC3622A

DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOWFREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Ra

3.1. 2sc3622.pdf Size:300K _nec

2SC3622A
2SC3622A

 4.1. 2sc3620.pdf Size:212K _toshiba

2SC3622A
2SC3622A



4.2. 2sc3621.pdf Size:206K _toshiba

2SC3622A
2SC3622A



 4.3. 2sc3623 2sc3623a.pdf Size:128K _nec

2SC3622A
2SC3622A

DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Ra

4.4. 2sc3623.pdf Size:229K _nec

2SC3622A
2SC3622A

 4.5. 2sc3624 2sc3624a.pdf Size:222K _nec

2SC3622A
2SC3622A

4.6. 2sc3624.pdf Size:222K _nec

2SC3622A
2SC3622A

4.7. 2sc3628.pdf Size:146K _mitsubishi

2SC3622A
2SC3622A

4.8. 2sc3629.pdf Size:145K _mitsubishi

2SC3622A
2SC3622A

4.9. 2sc3626.pdf Size:73K _inchange_semiconductor

2SC3622A
2SC3622A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3626 DESCRIPTION · ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-2

4.10. 2sc3627.pdf Size:117K _inchange_semiconductor

2SC3622A
2SC3622A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3627 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High collector breakdown voltage APPLICATIONS Ў¤ Switching regulator and high voltage switching applications Ў¤ High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION

4.11. 2sc3624.pdf Size:1169K _kexin

2SC3622A
2SC3622A

SMD Type Transistors NPN Transistors 2SC3624 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=150mA ● Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll

4.12. 2sc3624a.pdf Size:1199K _kexin

2SC3622A
2SC3622A

SMD Type Transistors NPN Transistors 2SC3624A SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=150mA ● Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Col

Datasheet: 2SC3616 , 2SC3617 , 2SC3618 , 2SC3619 , 2SC362 , 2SC3620 , 2SC3621 , 2SC3622 , BEL187 , 2SC3623 , 2SC3623A , 2SC3624 , 2SC3624A , 2SC3625 , 2SC3626 , 2SC3627 , 2SC3628 .

 

 
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