All Transistors. 2SC3629 Datasheet

 

2SC3629 Datasheet and Replacement


   Type Designator: 2SC3629
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 520 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: XM5
 

 2SC3629 Substitution

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2SC3629 Datasheet (PDF)

 8.1. Size:206K  toshiba
2sc3621.pdf pdf_icon

2SC3629

 8.2. Size:212K  toshiba
2sc3620.pdf pdf_icon

2SC3629

 8.3. Size:128K  nec
2sc3623 2sc3623a.pdf pdf_icon

2SC3629

DATA SHEETSILICON TRANSISTORS2SC3623, 3623ANPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3623)VEBO: 15 V (2SC3623A)ABSOLUTE MAXIMUM RATINGS (Ta = 25C

 8.4. Size:101K  nec
2sc3622 2sc3622a.pdf pdf_icon

2SC3629

DATA SHEETSILICON TRANSISTORS2SC3622, 3622ANPN SILICON EPITAXIAL TRANSISTORFOR LOWFREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3622)VEBO: 15 V (2SC3622A)ABSOLUTE MAXIMUM RATINGS (Ta = 25

Datasheet: 2SC3623 , 2SC3623A , 2SC3624 , 2SC3624A , 2SC3625 , 2SC3626 , 2SC3627 , 2SC3628 , MPSA42 , 2SC363 , 2SC3630 , 2SC3631 , 2SC3632 , 2SC3633 , 2SC3634 , 2SC3635 , 2SC3636 .

Keywords - 2SC3629 transistor datasheet

 2SC3629 cross reference
 2SC3629 equivalent finder
 2SC3629 lookup
 2SC3629 substitution
 2SC3629 replacement

 

 
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