2SC3709O Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3709O
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 180 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220
2SC3709O Transistor Equivalent Substitute - Cross-Reference Search
2SC3709O Datasheet (PDF)
2sc3709a.pdf
2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm Low collector saturation voltage: V = 0.4 V (max) CE (sat) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitt
2sc3709a.pdf
isc Silicon NPN Power Transistor 2SC3709ADESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1451AAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 50 VCEOV
2sc3709.pdf
isc Silicon NPN Power Transistor 2SC3709DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1451Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: FMMT5855
