All Transistors. 2SC380 Datasheet

 

2SC380 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC380

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 125 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

2SC380 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC380 Datasheet (PDF)

1.1. 2sc3807 3da3807.pdf Size:188K _update

2SC380
2SC380

2SC3807(3DA3807) 硅 NPN 半导体三极管/SILION NPN TRANSISTOR 用途:用于低频放大和驱动。 Purpose: low frequency general-purpose amplifiers, drivers. 特点: IC 大, hFE 高,VCE(sat)低,VEBO 高。 Features: Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High V . EBO 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号

1.2. 2sc380tm.pdf Size:462K _toshiba

2SC380
2SC380

2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 29dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage

 1.3. 2sc380.pdf Size:338K _toshiba

2SC380
2SC380



1.4. 2sc3803.pdf Size:194K _toshiba

2SC380
2SC380

2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Unit: mm Video Amplifier Applications High Speed Switching Applications • High transition frequency: fT = 200 MHz (typ.) • Low collector output capacitance: C = 3.5 pF (typ.) ob • Complementary to 2SA1483 Maximum Ratings (Ta = 25°C) Characteristics Sym

 1.5. 2sc3805.pdf Size:184K _toshiba

2SC380
2SC380

2SC3805 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications Unit: mm TV Chroma Output Applications • High voltage: VCEO = 300 V • Low output capacitance: C = 3.0 pF (typ.) ob Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V

1.6. 2sc3808.pdf Size:87K _sanyo

2SC380
2SC380

Ordering number:EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit:mm 2043A Features [2SC3808] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter

1.7. 2sc3807.pdf Size:128K _sanyo

2SC380
2SC380

Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit:mm 2043A Features [2SC3807] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter

1.8. 2sc3809.pdf Size:34K _nec

2SC380
2SC380

DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3809 is an NPN silicon epitaxial dual transistor having +0.3 5.0 MIN. 3.5-0.2 5.0 MIN. a large-gain-bandwidth product performance in a wide operating 3 2 current range. Dual chips in one p

1.9. 2sc3802k.pdf Size:129K _rohm

2SC380
2SC380

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.10. 2sc380tm.pdf Size:77K _secos

2SC380

2SC380TM 0.05A , 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? High Frequency Amplifier Applications G H ?Emitter ?Collector J ?Base CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-Y B A 4.40 4.70 B 4.30 4.7

1.11. 2sc3803.pdf Size:1223K _kexin

2SC380
2SC380

SMD Type Transistors NPN Transistors 2SC3803 1.70 0.1 ■ Features ● High transition frequency: fT = 200 MHz ● Low collector output capacitance: Cob = 3.5 pF 0.42 0.1 0.46 0.1 ● Complementary to 2SA1483 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45

Datasheet: 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

 
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