All Transistors. 2SC380 Datasheet

 

2SC380 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC380
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 125 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO92

 2SC380 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC380 Datasheet (PDF)

 ..1. Size:338K  toshiba
2sc380.pdf

2SC380 2SC380

 0.1. Size:194K  toshiba
2sc3803.pdf

2SC380 2SC380

2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Unit: mm Video Amplifier Applications High Speed Switching Applications High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: C = 3.5 pF (typ.) ob Complementary to 2SA1483 Maximum Ratings (Ta = 25C) Characteristics Sym

 0.2. Size:462K  toshiba
2sc380tm.pdf

2SC380 2SC380

2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage

 0.3. Size:184K  toshiba
2sc3805.pdf

2SC380 2SC380

2SC3805 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications Unit: mm TV Chroma Output Applications High voltage: VCEO = 300 V Low output capacitance: C = 3.0 pF (typ.) obMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 300 VCollector-emitter voltage VCEO 300 V

 0.4. Size:87K  sanyo
2sc3808.pdf

2SC380 2SC380

Ordering number:EN2105ANPN Epitaxial Planar Silicon Transistor2SC3808High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit:mm2043AFeatures [2SC3808] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to

 0.5. Size:128K  sanyo
2sc3807.pdf

2SC380 2SC380

Ordering number:EN2018ANPN Epitaxial Planar Silicon Transistor2SC3807High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit:mm2043AFeatures [2SC3807] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to

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2sc3809.pdf

2SC380 2SC380

DATA SHEETSILICON TRANSISTOR2SC3809NPN SILICON EPITAXIAL TRANSISTORFOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGSINDUSTRIAL USEFEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3809 is an NPN silicon epitaxial dual transistor having+0.35.0 MIN. 3.5-0.2 5.0 MIN.a large-gain-bandwidth product performance in a wide operating3 2current range. Dual chips i

 0.7. Size:129K  rohm
2sc3802k.pdf

2SC380 2SC380

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

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2sc380tm.pdf

2SC380

2SC380TM 0.05A , 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Frequency Amplifier Applications G HEmitterCollectorJBase CLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-YBA 4.40 4.70

 0.9. Size:784K  blue-rocket-elect
2sc380tm.pdf

2SC380 2SC380

2SC380TM Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features :G =29dB()(f=10.7MHz) pe High power Gain: Gpe=29dB(Typ.)(f=10.7MHz).. / Applications High frequency amplifier applications.

 0.10. Size:1223K  kexin
2sc3803.pdf

2SC380 2SC380

SMD Type TransistorsNPN Transistors2SC38031.70 0.1 Features High transition frequency: fT = 200 MHz Low collector output capacitance: Cob = 3.5 pF0.42 0.10.46 0.1 Complementary to 2SA14831.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45

 0.11. Size:188K  foshan
2sc3807 3da3807.pdf

2SC380 2SC380

2SC3807(3DA3807) NPN /SILION NPN TRANSISTOR:Purpose: low frequency general-purpose amplifiers, drivers.: IC , hFE ,VCE(sat),VEBO Features: Large current capacity, high DC current gain,Low collector-to-emitter saturation voltageHigh V .EBO/Absolute maximum ratings(Ta=25)

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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