All Transistors. 2SC380TMO Datasheet

 

2SC380TMO Datasheet and Replacement


   Type Designator: 2SC380TMO
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 3.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92
 

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2SC380TMO Datasheet (PDF)

 6.1. Size:462K  toshiba
 2sc380tm.pdf pdf_icon

2SC380TMO

2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage

 6.2. Size:77K  secos
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2SC380TMO

2SC380TM 0.05A , 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Frequency Amplifier Applications G HEmitterCollectorJBase CLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-YBA 4.40 4.70

 6.3. Size:784K  blue-rocket-elect
 2sc380tm.pdf pdf_icon

2SC380TMO

2SC380TM Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features :G =29dB()(f=10.7MHz) pe High power Gain: Gpe=29dB(Typ.)(f=10.7MHz).. / Applications High frequency amplifier applications.

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Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

Keywords - 2SC380TMO transistor datasheet

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