2SC380TMO
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC380TMO
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 35
V
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 0.05
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 100
MHz
Collector Capacitance (Cc): 3.2
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
TO92
2SC380TMO
Transistor Equivalent Substitute - Cross-Reference Search
2SC380TMO
Datasheet (PDF)
6.1. Size:462K toshiba
2sc380tm.pdf
2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage
6.2. Size:77K secos
2sc380tm.pdf
2SC380TM 0.05A , 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Frequency Amplifier Applications G HEmitterCollectorJBase CLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-YBA 4.40 4.70
6.3. Size:784K blue-rocket-elect
2sc380tm.pdf
2SC380TM Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features :G =29dB()(f=10.7MHz) pe High power Gain: Gpe=29dB(Typ.)(f=10.7MHz).. / Applications High frequency amplifier applications.
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