2SC4106M Datasheet and Replacement
   Type Designator: 2SC4106M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50
 W
   Maximum Collector-Base Voltage |Vcb|: 500
 V
   Maximum Collector-Emitter Voltage |Vce|: 400
 V
   Maximum Emitter-Base Voltage |Veb|: 7
 V
   Maximum Collector Current |Ic max|: 7
 A
   Max. Operating Junction Temperature (Tj): 175
 °C
   Transition Frequency (ft): 20
 MHz
   Collector Capacitance (Cc): 80
 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
		   Package: 
TO220
				
				  
				 
   - 
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2SC4106M Datasheet (PDF)
 7.1.  Size:92K  sanyo
 2sc4106.pdf 
						 
Ordering number:EN2471ANPN Triple Diffused Planar Silicon Transistor2SC4106400V/7A Switching Regulator ApplicationsFeatures Package Dimensions  High breakdown voltage and high reliability.unit:mm  Fast switching speed.2010C  Wide ASO.[2SC4106]  Adoption of MBIT process.10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : T
 7.2.  Size:213K  inchange semiconductor
 2sc4106.pdf 
						 
isc Silicon NPN Power Transistor 2SC4106DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
 8.1.  Size:19K  sanyo
 2sa1580 2sc4104.pdf 
						 
Ordering number:EN3172PNP/NPN Epitaxial Planar Silicon Transistors2SA1580/2SC4104High-Definition CRT Display ApplicationsFeatures Package Dimensions  High fT.unit:mm  Small reverse transfer capacitance.2018A  Adoption of FBET process.[2SA1580/2SC4104]C : CollectorB : BaseE : Emitter( ) : 2SA1580SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25
 8.2.  Size:93K  sanyo
 2sc4108.pdf 
						 
Ordering number:EN2473ANPN Triple Diffused Planar Silicon Transistor2SC4108400V/12A Switching Regulator ApplicationsFeatures Package Dimensions  High breakdown voltage and high reliability.unit:mm  Fast switching speed.2022A  Wide ASO.[2SC4108]  Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E
 8.3.  Size:93K  sanyo
 2sc4107.pdf 
						 
Ordering number:EN2472ANPN Triple Diffused Planar Silicon Transistor2SC4107400V/10A Switching Regulator ApplicationsFeatures Package Dimensions  High breakdown voltage and high reliability.unit:mm  Fast switching speed.2010C  Wide ASO.[2SC4107]  Adoption of MBIT process.10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : 
 8.4.  Size:95K  sanyo
 2sc4109.pdf 
						 
Ordering number:EN2474ANPN Triple Diffused Planar Silicon Transistor2SC4109400V/16A Switching Regulator ApplicationsFeatures Package Dimensions  High breakdown voltage and high reliability.unit:mm  Fast switching speed.2022A  Wide ASO.[2SC4109]  Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E
 8.5.  Size:92K  sanyo
 2sc4105.pdf 
						 
Ordering number:EN2470ANPN Triple Diffused Planar Silicon Transistor2SC4105400V/4A Switching Regulator ApplicationsFeatures Package Dimensions  High breakdown voltage and high reliability.unit:mm  Fast switching speed.2010C  Wide ASO.[2SC4105]  Adoption of MBIT process.10.24.53.65.11.31.20.8 1 : Base0.42 : Collector1 2 33 : EmitterJEDEC : TO
 8.6.  Size:1772K  rohm
 2sc4102 2sc3906k.pdf 
						 
2SC4102 / 2SC3906KDatasheetHigh-voltage Amplifier Transistor (120V, 50mA)lOutlinelParameter Value SOT-323 SOT-346VCEO120VIC50mA  2SC4102 2SC3906K(UMT3) (SMT3)                    lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=120V)2)Complements the 2SA1579/2SA1514K.
 8.7.  Size:1329K  rohm
 2sc4102fra.pdf 
						 
2SC4102 / 2SC3906K2SC4102FRA / 2SC3906KFRADatasheetNPN 50mA 120V High Voltage Amplifier transistorsAEC-Q101 QualifiedlOutline UMT3 SMT3Parameter ValueCollector CollectorVCEO120VBase BaseIC50mAEmitterEmitter2SC3906K2SC4102FRA 2SC3906KFRA2SC4102SOT-346 (SC-59)SOT-323 (SC-70)lFeatures1) High Breakdown Voltage (VCEO=120V).2) Complementary PNP Types :2
 8.8.  Size:67K  rohm
 2sc4102 2sc3906k 2sc2389s.pdf 
						 
2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S  External dimensions (Unit : mm)  Features 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VC
 8.9.  Size:126K  rohm
 2sc4102.pdf 
						 
High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K Features Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K 1.25Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VCollector-emitter voltage VCEO 120 V0.1Min.Emitter-base voltage VEBO 5 V
 8.10.  Size:463K  htsemi
 2sc4102.pdf 
						 
2SC4102TRANSISTOR (NPN)FEATURES SOT323  High Breakdown Voltage  Complements the 2SA1579 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 120 V CBO1. BASE V Collector-Emitter Voltage 120 V 2. EMITTER CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOI Collector Current 50 mA CP Collector Power Dissipat
 8.11.  Size:343K  kexin
 2sc4104.pdf 
						 
SMD Type TransistorsNPN Transistors 2SC4104SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features  High fT  Small reverse transfer capacitance1 2+0.1+0.050.95 -0.1 0.1 -0.01  Complementary to 2SA1580+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Co
 8.12.  Size:1100K  kexin
 2sc4102.pdf 
						 
SMD Type TransistorsNPN Transistors2SC4102 Features  High Breakdown Voltage  Complementary to 2SA15791 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50mA Collector Current -
 8.13.  Size:217K  inchange semiconductor
 2sc4108.pdf 
						 
isc Silicon NPN Power Transistor 2SC4108DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
 8.14.  Size:213K  inchange semiconductor
 2sc4107.pdf 
						 
isc Silicon NPN Power Transistor 2SC4107DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
 8.15.  Size:226K  inchange semiconductor
 2sc4109.pdf 
						 
isc Silicon NPN Power Transistor 2SC4109DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
 8.16.  Size:213K  inchange semiconductor
 2sc4105.pdf 
						 
isc Silicon NPN Power Transistor 2SC4105DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
Datasheet: 2SC4104-4
, 2SC4104-5
, 2SC4105
, 2SC4105L
, 2SC4105M
, 2SC4105N
, 2SC4106
, 2SC4106L
, 2SC2383Y
, 2SC4106N
, 2SC4107
, 2SC4107L
, 2SC4107M
, 2SC4107N
, 2SC4108
, 2SC4108L
, 2SC4108M
. 
History: 3DD13005_F8-1
Keywords - 2SC4106M transistor datasheet
 2SC4106M cross reference
 2SC4106M equivalent finder
 2SC4106M lookup
 2SC4106M substitution
 2SC4106M replacement