2SC412 Datasheet. Specs and Replacement
Type Designator: 2SC412 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
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2SC412 datasheet
0.3. Size:93K sanyo
2sc4123.pdf 
Ordering number EN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC4123] Adoption of MBIT process. 16.0 5.6 3.4 On-chip da... See More ⇒
0.4. Size:98K sanyo
2sc4124.pdf
Ordering number EN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Adoption of MBIT process. unit mm On-chip damper diode. 2039D High breakdown voltage (VCBO=1500V). [2SC4124] High speed (tf=100ns typ). 16.0 5.6 3.4 High reliability (Adoption of HV... See More ⇒
0.5. Size:47K hitachi
2sc4126.pdf
2SC4126 Silicon NPN Epitaxial Application VHF and UHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4126 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC... See More ⇒
0.6. Size:216K inchange semiconductor
2sc4125.pdf
isc Silicon NPN Power Transistor 2SC4125 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for very high-definition color display horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(... See More ⇒
0.7. Size:215K inchange semiconductor
2sc4123.pdf
isc Silicon NPN Power Transistor 2SC4123 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
0.8. Size:215K inchange semiconductor
2sc4124.pdf
isc Silicon NPN Power Transistor 2SC4124 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
0.9. Size:211K inchange semiconductor
2sc4129.pdf
isc Silicon NPN Power Transistor 2SC4129 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
Detailed specifications: 2SC4112, 2SC4113, 2SC4114, 2SC4115, 2SC4116, 2SC4117, 2SC4118, 2SC4119, BC547, 2SC4120, 2SC4121, 2SC4122, 2SC4123, 2SC4124, 2SC4125, 2SC4126, 2SC4127
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