2SC412
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC412
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100
W
Maximum Collector-Base Voltage |Vcb|: 300
V
Maximum Collector-Emitter Voltage |Vce|: 200
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Collector Capacitance (Cc): 500
pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO3
2SC412
Transistor Equivalent Substitute - Cross-Reference Search
2SC412
Datasheet (PDF)
0.3. Size:93K sanyo
2sc4123.pdf 
Ordering number:EN2956NPN Triple Diffused Planar Silicon Transistor2SC4123Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC4123] Adoption of MBIT process.16.05.63.4 On-chip da
0.4. Size:98K sanyo
2sc4124.pdf
Ordering number:EN2962NPN Triple Diffused Planar Silicon Transistor2SC4124Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm On-chip damper diode.2039D High breakdown voltage (VCBO=1500V).[2SC4124] High speed (tf=100ns typ).16.05.63.4 High reliability (Adoption of HV
0.5. Size:47K hitachi
2sc4126.pdf
2SC4126Silicon NPN EpitaxialApplicationVHF and UHF wide band amplifierOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4126Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 2VCollector current IC 50 mACollector power dissipation PC
0.6. Size:216K inchange semiconductor
2sc4125.pdf
isc Silicon NPN Power Transistor 2SC4125DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for very high-definition color display horizontaldeflection output applicaitions.ABSOLUTE MAXIMUM RATINGS(
0.7. Size:215K inchange semiconductor
2sc4123.pdf
isc Silicon NPN Power Transistor 2SC4123DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
0.8. Size:215K inchange semiconductor
2sc4124.pdf
isc Silicon NPN Power Transistor 2SC4124DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
0.9. Size:211K inchange semiconductor
2sc4129.pdf
isc Silicon NPN Power Transistor 2SC4129DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Datasheet: 2SA1771
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, 2SA17H
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, 2SA180
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, 2SA1800Y
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