2SC42 Datasheet. Specs and Replacement
Type Designator: 2SC42 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 4
Package: TO3
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2SC42 datasheet
2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit mm 1.2 0.05 Low reverse transfer capacitance Cre = 0.45 pF (typ.) 0.8 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 2 3 Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Coll... See More ⇒
2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current VCEO = 50 V, IC = 150 mA (max) High hFE hFE = 120 700 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolut... See More ⇒
2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications Unit mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance Cre = 0.55 pF (typ.) Low noise figure NF = 2dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Co... See More ⇒
2SC4249 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4249 TV VHF RF Amplifier Applications Unit mm High gain Gpe = 24dB (typ.) (f = 200 MHz) Low noise NF = 2.0dB (typ.) (f = 200 MHz) Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter volta... See More ⇒
2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse hFE Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA) Low on resistance RON = 1 (typ.) (IB = 5 mA) High DC current gain hFE = 200 to 1200 Small package Absolute Maximum ... See More ⇒
2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V... See More ⇒
2SC4245 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4245 TV Tuner, UHF Mixer Applications Unit mm VHF UHF Band RF Amplifier Applications Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Colle... See More ⇒
2SC4246 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4246 TV Tuner, UHF Oscillator Applications (common base) Unit mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter vo... See More ⇒
2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 100 mW Ju... See More ⇒
2SC4244 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4244 UHF TV Tuner RF Amplifier Applications Unit mm Low noise figure NF = 4dB (typ.) High power gain Gpb = 17dB (typ.) Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 ... See More ⇒
2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 For Muting and Switching Applications Unit mm High emitter-base voltage VEBO = 25 V (min) High reverse h Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance R = 1 (typ.) (I = 5 mA) ON B High DC current gain hFE = 200 1200 Small package Maximum Ra... See More ⇒
2SC4248 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4248 TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V... See More ⇒
2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit mm High conversion gain Gce = 25dB (typ.) Low reverse transfer capacitance C = 0.45 pF (typ.) re Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO ... See More ⇒
2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit mm Good linearity of fT Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector... See More ⇒
2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT Unit mm High Speed Switching Applications High transition frequency fT = 400 MHz (typ.) (V = 10 V, I = 70 mA) CE C Low output capacitance C ... See More ⇒
2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4209 Driver Stage Amplifier Applications Unit mm Voltage Amplifier Applications Complementary to 2SA1620 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 30... See More ⇒
2SC4214 TOSHIBA Transistor Silicon NPN Planar Type 2SC4214 UHF TV Tuner RF Amplifier Applications Unit mm Low noise figure NF = 2.8dB (typ.) High power gain V = 4.5 V G = 15dB (typ.) CC pb Excellent forward AGC characteristics Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage V... See More ⇒
2SC4247 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4247 TV Tuner, UHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V... See More ⇒
2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4210 Audio Power Amplifier Applications Unit mm High DC current gain hFE = 100 320 Complementary to 2SA1621 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector curre... See More ⇒
Ordering number EN2825A NPN Triple Diffused Planar Silicon Transistor 2SC4220 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4220] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4 ... See More ⇒
Ordering number EN2761A NPN Triple Diffused Planar Silicon Transistor 2SC4222 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4222] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4 ... See More ⇒
Ordering number EN2971 NPN Epitaxial Planar Silicon Transistor 2SC4270 UHF Converter, Local Oscillator Applications Features Package Dimensions Small noise figure NF=3.0dB typ (f=0.9GHz) unit mm High power gain PG=12dB typ (f=0.9GHz) 2018B High cutoff frequency fT=3.0GHz typ [2SC4270] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collect... See More ⇒
Ordering number EN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers. unit mm 2003B Features [2SC4204] 5.0 Adoption of MBIT process. 4.0 4.0 High DC current gain (hFE=800 to 3200). Large current capacity (IC=0.7A). Low collector-to-emitter saturation voltage 0.... See More ⇒
Ordering number EN2816B NPN Triple Diffused Planar Silicon Transistor 2SC4221 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4221] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4 ... See More ⇒
Ordering number EN2709 NPN Triple Diffused Planar Silicon Transistor 2SC4219 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability unit mm (VCEO 400V). 2049C Fast switching speed (tf=0.1 s typ). [2SC4219] Wide ASO. 10.2 4.5 1.3 Adoption of MBIT process. Suitable for sets whose height is restricted. ... See More ⇒
Ordering number EN2763A NPN Triple Diffused Planar Silicon Transistor 2SC4224 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4224] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.4 ... See More ⇒
Ordering number EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions Small size making it easy to provide high-density, unit mm small-sized hybrid ICs. 2038A [2SC4272] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector 3 Emitter SANYO PCP (Bottom view) Specifications Absolute Ma... See More ⇒
Ordering number EN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4257] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 E... See More ⇒
Ordering number EN2969A NPN Epitaxial Planar Silicon Transistor 2SC4269 VHF Converter, Local Oscillator Applications Features Package Dimensions High power gain PG=15dB typ (f=0.4GHz) unit mm High cutoff frequency fT=1.2GHz typ 2018B [2SC4269] 0.4 0.16 3 0 0.1 1 0.95 2 0.95 1.9 2.9 1 Base 2 Emitter 3 Collector SANYO CP Specifications Absolute Maximum ... See More ⇒
Ordering number EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4256] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 Base 0.4 2 Collector 1 2 3 3 Em... See More ⇒
Ordering number EN2963 NPN Triple Diffused Planar Silicon Transistor 2SC4293 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=300ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4293] Adoption of MBIT process. 16.0 5.6 3.4 On-chip ... See More ⇒
Ordering number EN2762A NPN Triple Diffused Planar Silicon Transistor 2SC4223 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2049C Wide ASO. [2SC4223] Adoption of MBIT process. 10.2 4.5 1.3 Suitable for sets whose height is restricted. 1.2 0.8 0.... See More ⇒
Ordering number EN2968 NPN Triple Diffused Planar Silicon Transistor 2SC4217 Color TV Chroma Output and Audio Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Micaless package facilitating easy mounting. 2042A [2SC4217] B Base C Collector E Emitter SANYO TO-126ML Specifications Absolute Maximum Ratings at Ta = 25 C ... See More ⇒
Ordering number EN2679A NPN Triple Diffused Planar Silicon Transistor 2SC4291 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3 s max). unit mm High breakdown voltage (VCBO=1500V). 2022A High reliability (adoption of HVP process). [2SC4291] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 ... See More ⇒
Ordering number EN2710A NPN Epitaxial Planar Silicon Transistor 2SC4271 High-Definition CRT Display Video Output Applications Applications Package Dimensions Wide-band amplifiers. unit mm High frequency drivers. 2009B [2SC7271] Features High fT (fT=2.2GHz typ) High current (IC=300mA) Adoption of FBET process. 1 Emitter JEDEC TO-126 2 Collector 3 Bas... See More ⇒
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2SC4215 0.02A , 40V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Small reverse transfer capacitance Cre = 0.55pF (typ.). A Low noise figure NF=2dB (typ.) (f=100 MHz) L 3 3 Top View C B 1 CLASSIFICATION OF hFE 1 2 2 K E Product-Rank 2SC4215-R 2SC42... See More ⇒
2SC4226 0.1A , 20V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 Low noise A High gain L 3 Power dissipation.(PC=150mW) 3 Top View C B 1 1 2 2 K E APPLICATIONS High frequency low noise amplifier. D H J F G CLASSIFICATION OF hFE Pro... See More ⇒
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4215 TRANSISTOR (NPN) FEATURES 1. BASE Small reverse transfer capacitance Cre= 0.55pF(typ.) 2. EMITTER Low noise figure NF=2dB (typ.) (f=100 MHz) 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base ... See More ⇒
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Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 150 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Contin... See More ⇒
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2SC4296 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4296 Symbol Conditions 2SC4296 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 500 ICBO VCB=500V 100max V ... See More ⇒
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2SC4298 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC4298 Symbol 2SC4298 Symbol Conditions Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 100max VCBO 500 ICBO VCB=500V ... See More ⇒
2SC4215 TRANSISTOR (NPN) SOT-323 FEATURES Small reverse transfer capacitance Cre= 0.55pF(typ.) Low noise figure NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Curre... See More ⇒
2SC4215 SOT-323 Transistor(NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features Small reverse transfer capacitance Cre= 0.55pF(typ.) Low noise figure NF=2dB (typ.) (f=100 MHz) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO ... See More ⇒
2SC4215 NPN Silicon Transistor P b Lead(Pb)-Free 3 1 2 1. BASE 2. EMITTER FEATURES 3. COLLECTOR SOT-323(SC-70) * Power dissipation SOT-323 Outline Demensions Unit mm A SOT-323 Dim Min Max A 0.30 0.40 B C TOP VIEW B 1.15 1.35 C 2.00 2.40 D - 0.65 D E 0.30 0.40 G E G 1.20 1.40 H H 1.80 2.20 J 0.00 0.10 K K 0.80 1.00 L 0.42 0.53 L M 0.10 0.25 J M WEITRON 1/4 2... See More ⇒
LESHAN RADIO COMPANY, LTD. L2SC4226T1G S-L2SC4226T1G 3 1 2 SC-70/SOT-323 DESCRIPTION The L2SC4226T1G is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. We declare that the material of product compliance with RoHS requirements. S- Prefix ... See More ⇒
SMD Type Transistors NPN Transistors 2SC4270 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect... See More ⇒
SMD Type Transistors NPN Transistors 2SC4226 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 m... See More ⇒
SMD Type Transistors NPN Transistors 2SC4272 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=45V 0.42 0.1 0.46 0.1 Small Size Making It Easy To Provide High-Density, To Provide High-Density, 1.Base 27MHz CB Transceiver Driver Applications 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra... See More ⇒
SMD Type Transistors NPN Transistors 2SC4269 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect... See More ⇒
SMD Type Transistors NPN Transistors 2SC4209 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=80V +0.05 0.95+0.1 -0.1 0.1 -0.01 Complementary to 2SA1620 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector ... See More ⇒
SMD Type Transistors NPN Transistors 2SC4210 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=800mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 Complementary to 2SA1621 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - ... See More ⇒
2sc4228a 2sc4228b 2sc4228c 2sc4228d 2sc4228e.pdf
2SC4228 NPN 2SC4228 NPN SOT-323 VHF UHF S21e 2 5.5 dB @ VCE=3V IC=5mA f=2GHz ... See More ⇒
2sc4226-r24 2sc4226-r25 2sc4226-r26.pdf
2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3... See More ⇒
2sc4226-r23 2sc4226-r24 2sc4226-r25.pdf
2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO ... See More ⇒
2sc4226a 2sc4226b 2sc4226c 2sc4226d 2sc4226e.pdf
2SC4226 NPN SILICON RF TRANSISTOR External bipolar process, with high power gain process, with high power gain Low noise characteristics. The adoption of noise characteristics. The adoption of submit- niature SOT- 323 package, Especially suitable for Especially suitable for high density surface patch installation, mainly for installation, mainly for the VHF, UHF low noise ampli... See More ⇒
2SC4237T8TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 7 V EBO I Collector Curr... See More ⇒
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4237 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Vo... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4205 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4235 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALU... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4265 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 30 V CBO ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4274 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state re... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4231 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4245 DESCRIPTION High Current-Gain Bandwidth Product f = 2400MHz TYP. @V = 10 V, I = 2 mA T CE C Low Noise 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner , UHF mixer applications VHF UHF band RF amplifier applications ABSOLUTE MAXIMUM R... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4261 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 25 V CBO V Collector-Emitter ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4226 DESCRIPTION Low Collector Curren -I = 0.1A C Low Collector Power Pc=0.1W With SOT-323 Package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4233 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4246 DESCRIPTION High Current-Gain Bandwidth Product f = 1500MHz TYP. @V = 10 V, I = 8 mA T CE C Low Noise 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner , UHF oscillator applications TV tuner , UHF converter applications ABSOLUTE MAXIM... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4251 DESCRIPTION High f T- f = 1100 MHz TYP. T Low Output Capacitance- C = 0.9 pF TYP. OB 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4262 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emi... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4234 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN... See More ⇒
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION Low Noise High Gain APPLICATIONS Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4293 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLU... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4236 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
isc Silicon NPN RF Transistor 2SC4227 DESCRIPTION Low Noise NF = 1.4 dB TYP., @V = 3 V, I = 7 mA, f = 1.0 GHz CE C High Gain S 2 = 12 dB TYP. @V = 3 V, I = 7 mA, f = 1.0 GHz 21e CE C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF, UHF low noise amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4242 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.8V(Max.)@ I = 4.0A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4273 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed High Reliability Low Collector Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convert... See More ⇒
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4264 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION With TO-247 package Complement to type 2SA1633 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolut... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4228 DESCRIPTION High f T 8.0GHz TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C Low C re 0.3pF TYP., @V = 3 V, I = 0, f = 1 MHz CB E High S 2 21e 7.5 dB TYP. @V = 3 V, I = 5 mA, f = 2 GHz CE C 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4232 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RATIN... See More ⇒
isc Silicon NPN Power Transistor 2SC4298 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4230 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies ABSOLUTE MAXIMUM RAT... See More ⇒
isc Silicon NPN Power Transistor 2SC4275 DESCRIPTION Low saturation voltage High Switching Speed High reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High speed DC-DC converter applications Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATIN... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION With TO-3PN package High voltage ,high speed Low collector saturation voltage High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 m... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4294 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output ... See More ⇒
isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V C... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4247 DESCRIPTION High Current-Gain Bandwidth Product f = 4 GHz TYP. @V = 10 V, I = 10 mA T CE C Low Noise 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner , UHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
isc Product Specification isc Silicon NPN Power Transistor 2SC4288 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect... See More ⇒
Detailed specifications: 2SC4193, 2SC4194, 2SC4195, 2SC4196, 2SC4197, 2SC4198, 2SC4199, 2SC4199A, 2SD718, 2SC420, 2SC4200, 2SC4201, 2SC4202, 2SC4203, 2SC4204, 2SC4205, 2SC4206
Keywords - 2SC42 pdf specs
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BJT Parameters and How They Relate
History: 2SC4199A
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