2SC4205 Datasheet and Replacement

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4205DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~700 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolut

2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT Unit: mm High Speed Switching Applications High transition frequency: fT = 400 MHz (typ.) (V = 10 V, I = 70 mA) CE C Low output capacitance: C

2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4209 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA1620 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO 80 VEmitter-base voltage VEBO 5 VCollector current IC 30

Ordering number:EN2531ANPN Epitaxial Planar Silicon Transistor2SC4204High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers. unit:mm2003BFeatures [2SC4204]5.0 Adoption of MBIT process.4.04.0 High DC current gain (hFE=800 to 3200). Large current capacity (IC=0.7A). Low collector-to-emitter saturation voltage0.

Transistor2SC4208, 2SC4208ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1619 and 2SA1619A5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with2SA1619 and 2SA1619A.Allowing supply with the radial taping.0.7 0.1

Transistor2SC4208, 2SC4208ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1619 and 2SA1619A5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with2SA1619 and 2SA1619A.Allowing supply with the radial taping.0.7 0.1

SMD Type TransistorsNPN Transistors2SC4209SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=80V+0.050.95+0.1-0.1 0.1 -0.01 Complementary to 2SA16201.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector