2SC4206 Datasheet. Specs and Replacement
Type Designator: 2SC4206 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO218
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2SC4206 datasheet
2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current VCEO = 50 V, IC = 150 mA (max) High hFE hFE = 120 700 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolut... See More ⇒
2SC4203 TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC4203 Video Output for High Definition VDT Unit mm High Speed Switching Applications High transition frequency fT = 400 MHz (typ.) (V = 10 V, I = 70 mA) CE C Low output capacitance C ... See More ⇒
2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4209 Driver Stage Amplifier Applications Unit mm Voltage Amplifier Applications Complementary to 2SA1620 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 30... See More ⇒
Detailed specifications: 2SC42, 2SC420, 2SC4200, 2SC4201, 2SC4202, 2SC4203, 2SC4204, 2SC4205, 2SC4793, 2SC4207, 2SC4208, 2SC4209, 2SC4210, 2SC4211, 2SC4212, 2SC4213, 2SC4214
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