2SC4251 Datasheet and Replacement

2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 100 mW Ju... See More ⇒

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4251 DESCRIPTION High f T- f = 1100 MHz TYP. T Low Output Capacitance- C = 0.9 pF TYP. OB 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒

2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit mm 1.2 0.05 Low reverse transfer capacitance Cre = 0.45 pF (typ.) 0.8 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 2 3 Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Coll... See More ⇒

2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V... See More ⇒

2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit mm High conversion gain Gce = 25dB (typ.) Low reverse transfer capacitance C = 0.45 pF (typ.) re Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO ... See More ⇒

2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit mm Good linearity of fT Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector... See More ⇒

Ordering number EN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4257] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 E... See More ⇒

Ordering number EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4256] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 Base 0.4 2 Collector 1 2 3 3 Em... See More ⇒

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an... See More ⇒

... See More ⇒

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter ... See More ⇒