2SC4272D
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4272D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.3
W
Maximum Collector-Base Voltage |Vcb|: 75
V
Maximum Collector-Emitter Voltage |Vce|: 45
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Collector Capacitance (Cc): 15
pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
SOT89
2SC4272D
Transistor Equivalent Substitute - Cross-Reference Search
2SC4272D
Datasheet (PDF)
7.1. Size:94K sanyo
2sc4272.pdf
Ordering number:EN2970NPN Epitaxial Planar Silicon Transistor2SC427227MHz CB Transceiver Driver ApplicationsFeatures Package Dimensions Small size making it easy to provide high-density,unit:mmsmall-sized hybrid ICs.2038A[2SC4272]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.75 2 : Collector3 : EmitterSANYO : PCP(Bottom view)SpecificationsAbsolute Ma
7.2. Size:1285K kexin
2sc4272.pdf
SMD Type TransistorsNPN Transistors2SC42721.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=45V0.42 0.10.46 0.1 Small Size Making It Easy To Provide High-Density, To Provide High-Density,1.Base 27MHz CB Transceiver Driver Applications2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
8.1. Size:106K sanyo
2sc4270.pdf
Ordering number:EN2971NPN Epitaxial Planar Silicon Transistor2SC4270UHF Converter,Local Oscillator ApplicationsFeatures Package Dimensions Small noise figure : NF=3.0dB typ (f=0.9GHz)unit:mm High power gain : PG=12dB typ (f=0.9GHz)2018B High cutoff frequency : fT=3.0GHz typ[2SC4270]0.40.1630~0.11 0.95 20.951.92.91 : Base2 : Emitter3 : Collect
8.2. Size:78K sanyo
2sc4271.pdf
Ordering number:EN2710ANPN Epitaxial Planar Silicon Transistor2SC4271High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Wide-band amplifiers.unit:mm High frequency drivers.2009B[2SC7271]Features High fT (fT=2.2GHz typ) High current (IC=300mA) Adoption of FBET process.1 : EmitterJEDEC : TO-1262 : Collector3 : Bas
8.3. Size:116K fuji
2sc4274.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.5. Size:113K fuji
2sc4275.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
8.6. Size:111K fuji
2sc4276.pdf
FUJI POWER TRANSISTOR2SC4276TRIPLE DIFFUSED PLANER TYPEHIGH VOLTAGE,HIGH SPEED SWITCHINGOutline DrawingsTO-3PFeaturesHigh voltage,High speed switchingLow saturation voltageHigh reliabilityApplicationsSwitching regulatorsDC-DC convertorJEDEC -Solid state relay EIAJ SC-65General purpose power amplifiersMaximum ratings and characteristicsAbsolute maximum ratings
8.7. Size:121K jmnic
2sc4278.pdf
Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 150 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Contin
8.8. Size:1208K kexin
2sc4270.pdf
SMD Type TransistorsNPN Transistors2SC4270SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
8.9. Size:183K inchange semiconductor
2sc4274.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4274DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state re
8.10. Size:185K inchange semiconductor
2sc4273.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4273DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedHigh ReliabilityLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convert
8.11. Size:126K inchange semiconductor
2sc4278.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4278 DESCRIPTION With TO-247 package Complement to type 2SA1633 High current and high power capability APPLICATIONS For audio output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol 3 EmitterAbsolut
8.12. Size:216K inchange semiconductor
2sc4275.pdf
isc Silicon NPN Power Transistor 2SC4275DESCRIPTIONLow saturation voltageHigh Switching SpeedHigh reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh speed DC-DC converter applicationsSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATIN
8.13. Size:150K inchange semiconductor
2sc4276.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4276 DESCRIPTION With TO-3PN package High voltage ,high speed Low collector saturation voltage High reliability APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 m
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