2SC429 Datasheet and Replacement

   Type Designator: 2SC429
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO50-1

2SC429 Substitution

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2SC429 Datasheet (PDF)

0.1. Size:195K 1
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Ordering number:EN2963NPN Triple Diffused Planar Silicon Transistor2SC4293Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=300ns max).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC4293] Adoption of MBIT process.16.05.63.4 On-chip

0.4. Size:39K sanyo
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Ordering number:EN2679ANPN Triple Diffused Planar Silicon Transistor2SC4291Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=0.3s max).unit:mm High breakdown voltage (VCBO=1500V).2022A High reliability (adoption of HVP process).[2SC4291] Adoption of MBIT process.15.63.24.814.02.0

0.5. Size:237K jmnic
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JMnic Product SpecificationSilicon NPN Power Transistors 2SC4297 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

0.6. Size:237K jmnic
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JMnic Product SpecificationSilicon NPN Power Transistors 2SC4299 DESCRIPTION With TO-3PML package High voltage ,high switching speed Wide area of safe operation APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25

0.7. Size:233K jmnic
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JMnic Product SpecificationSilicon NPN Power Transistors 2SC4298 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

0.8. Size:25K sanken-ele
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2SC4296Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4296 Symbol Conditions 2SC4296Unit Unit0.20.2 5.515.60.23.45VCBO 500 ICBO VCB=500V 100maxV

0.9. Size:25K sanken-ele
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2SC4297Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit0.20.2 5.515.60.23.45VCBO V ICBO VCB=500V 100max A50

0.10. Size:25K sanken-ele
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2SC4299Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4299 Symbol Conditions 2SC4299 UnitUnit0.20.2 5.515.60.23.45VCBO 900 ICBO VCB=800V 100max AVVCEO 800 IE

0.11. Size:26K sanken-ele
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2SC4298Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC4298Symbol 2SC4298 Symbol Conditions UnitUnit0.20.2 5.515.60.23.45100maxVCBO 500 ICBO VCB=500V

0.12. Size:191K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4296DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

0.13. Size:188K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4293DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLU

0.14. Size:190K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4297DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

0.15. Size:191K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4299DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

0.16. Size:222K inchange semiconductor
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isc Silicon NPN Power Transistor 2SC4298DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.17. Size:188K inchange semiconductor
2sc4294.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4294DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .