2SC4295M Datasheet and Replacement

   Type Designator: 2SC4295M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: ATR

2SC4295M Substitution

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2SC4295M Datasheet (PDF)

..1. Size:195K 1
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8.1. Size:53K sanyo
2sc4292.pdf pdf_icon

8.2. Size:92K sanyo
2sc4293.pdf pdf_icon

Ordering number:EN2963NPN Triple Diffused Planar Silicon Transistor2SC4293Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=300ns max).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (adoption of HVP process).[2SC4293] Adoption of MBIT process.16.05.63.4 On-chip

8.3. Size:39K sanyo
2sc4291.pdf pdf_icon

Ordering number:EN2679ANPN Triple Diffused Planar Silicon Transistor2SC4291Ultrahigh-Definition Color DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=0.3s max).unit:mm High breakdown voltage (VCBO=1500V).2022A High reliability (adoption of HVP process).[2SC4291] Adoption of MBIT process.15.63.24.814.02.0

8.4. Size:237K jmnic
2sc4297.pdf pdf_icon

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4297 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

8.5. Size:237K jmnic
2sc4299.pdf pdf_icon

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4299 DESCRIPTION With TO-3PML package High voltage ,high switching speed Wide area of safe operation APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25

8.6. Size:233K jmnic
2sc4298.pdf pdf_icon

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4298 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

8.7. Size:25K sanken-ele
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2SC4296Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4296 Symbol Conditions 2SC4296Unit Unit0.20.2 5.515.60.23.45VCBO 500 ICBO VCB=500V 100maxV

8.8. Size:25K sanken-ele
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2SC4297Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit0.20.2 5.515.60.23.45VCBO V ICBO VCB=500V 100max A50

8.9. Size:25K sanken-ele
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2SC4299Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4299 Symbol Conditions 2SC4299 UnitUnit0.20.2 5.515.60.23.45VCBO 900 ICBO VCB=800V 100max AVVCEO 800 IE

8.10. Size:26K sanken-ele
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2SC4298Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC4298Symbol 2SC4298 Symbol Conditions UnitUnit0.20.2 5.515.60.23.45100maxVCBO 500 ICBO VCB=500V

8.11. Size:191K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4296DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

8.12. Size:188K inchange semiconductor
2sc4293.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4293DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput applicationsABSOLU

8.13. Size:190K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4297DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

8.14. Size:191K inchange semiconductor
2sc4299.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4299DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

8.15. Size:222K inchange semiconductor
2sc4298.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC4298DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

8.16. Size:188K inchange semiconductor
2sc4294.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4294DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition color display horizontal deflectionoutput

Datasheet: 2SC4289A , 2SC429 , 2SC4290 , 2SC4290A , 2SC4291 , 2SC4292 , 2SC4293 , 2SC4294 , 100DA025D , 2SC4296 , 2SC4297 , 2SC4298 , 2SC4299 , 2SC42A , 2SC43 , 2SC430 , 2SC4300 .