2SC4297 Datasheet. Specs and Replacement
Type Designator: 2SC4297 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO218
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2SC4297 datasheet
..1. Size:237K jmnic
2sc4297.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC4297 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS... See More ⇒
..2. Size:25K sanken-ele
2sc4297.pdf
2SC4297 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4297 Unit Symbol Conditions 2SC4297 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO V ICBO VCB=500V 100max A 50... See More ⇒
8.3. Size:92K sanyo
2sc4293.pdf
Ordering number EN2963 NPN Triple Diffused Planar Silicon Transistor 2SC4293 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=300ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4293] Adoption of MBIT process. 16.0 5.6 3.4 On-chip ... See More ⇒
8.4. Size:39K sanyo
2sc4291.pdf
Ordering number EN2679A NPN Triple Diffused Planar Silicon Transistor 2SC4291 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=0.3 s max). unit mm High breakdown voltage (VCBO=1500V). 2022A High reliability (adoption of HVP process). [2SC4291] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 ... See More ⇒
8.6. Size:233K jmnic
2sc4298.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4298 DESCRIPTION With TO-3PML package High voltage ,high speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS... See More ⇒
8.7. Size:25K sanken-ele
2sc4296.pdf
2SC4296 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4296 Symbol Conditions 2SC4296 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 500 ICBO VCB=500V 100max V ... See More ⇒
8.8. Size:25K sanken-ele
2sc4299.pdf
2SC4299 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4299 Symbol Conditions 2SC4299 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 900 ICBO VCB=800V 100max A V VCEO 800 IE... See More ⇒
8.9. Size:26K sanken-ele
2sc4298.pdf
2SC4298 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) 2SC4298 Symbol 2SC4298 Symbol Conditions Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 100max VCBO 500 ICBO VCB=500V ... See More ⇒
8.11. Size:188K inchange semiconductor
2sc4293.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4293 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications ABSOLU... See More ⇒
8.13. Size:222K inchange semiconductor
2sc4298.pdf
isc Silicon NPN Power Transistor 2SC4298 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
8.14. Size:188K inchange semiconductor
2sc4294.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4294 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition color display horizontal deflection output ... See More ⇒
Detailed specifications: 2SC4290, 2SC4290A, 2SC4291, 2SC4292, 2SC4293, 2SC4294, 2SC4295M, 2SC4296, 2SD718, 2SC4298, 2SC4299, 2SC42A, 2SC43, 2SC430, 2SC4300, 2SC4301, 2SC4302
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