All Transistors. 2SC4399-5 Datasheet

 

2SC4399-5 Datasheet and Replacement


   Type Designator: 2SC4399-5
   SMD Transistor Code: F5
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 320 MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 135
   Noise Figure, dB: -
   Package: TO323
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2SC4399-5 Datasheet (PDF)

 7.1. Size:153K  sanyo
2sc4399.pdf pdf_icon

2SC4399-5

Ordering number:EN3020NPN Epitaxial Planar Silicon Transistor2SC4399High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB typ (f=100MHz).unit:mm Very small-sized package permitting the 2SC4399-2059Bapplied sets to be made small and slim.[2SC4399]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base2 :

 8.1. Size:465K  toshiba
2sc4394.pdf pdf_icon

2SC4399-5

2SC4394 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high cain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

 8.2. Size:318K  toshiba
2sc4393.pdf pdf_icon

2SC4399-5

2SC4393 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4393 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure. NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1000 MHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage

 8.3. Size:91K  sanyo
2sc4390.pdf pdf_icon

2SC4399-5

Ordering number:EN2958ANPN Epitaxial Planar Silicon Transistor2SC4390High-hFE, AF Amplifier ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High DC current gain (hFE=800 to 3200).2038A Large current capacity (IC=2A).[2SC4390] Low collector-to-emitter saturation voltage4.5(VCE(sat) 0.3V). 1.51.6 High VEBO (VEBO 15V).0.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BC847RA | 2N2874 | 2SB744A | 2N332A | MMBT3906HE3 | BDW24 | BUYP53

Keywords - 2SC4399-5 transistor datasheet

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 2SC4399-5 equivalent finder
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