2SC4475 Specs and Replacement
Type Designator: 2SC4475
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.75 W
Maximum Collector-Base Voltage |Vcb|: 2000 V
Maximum Collector-Emitter Voltage |Vce|: 1800 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.003 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Collector Capacitance (Cc): 1.4 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220AB
2SC4475 Substitution
- BJT ⓘ Cross-Reference Search
2SC4475 datasheet
Ordering number EN3338 NPN Triple Diffused Planar Silicon Transistor 2SC4475 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications Applications Package Dimensions High voltage amplifier. unit mm High voltage switching. 2010C Dynamic focus. [2SC4475] 10.2 4.5 3.6 5.1 1.3 Features High breakdown voltage (VCEO min=1800V). Small Cob (Cob typ=1.... See More ⇒
Ordering number EN3018 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1697/2SC4474 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1697/2SC4474] Features High fT fT=300MHz. High breakdown voltage VCEO=200V min. Small reverse transfer capacitan... See More ⇒
Ordering number EN3017 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1696/2SC4473 High-Definition CRT Display, Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2041 [2SA1696/2SC4473] Features High fT fT=500MHz. High breakdown voltage VCEO=120V min. Small reverse transfer capacitan... See More ⇒
Detailed specifications: 2SC4464, 2SC4466, 2SC4467, 2SC447, 2SC4470, 2SC4471, 2SC4473, 2SC4474, TIP42C, 2SC4476, 2SC4477, 2SC4478, 2SC4479, 2SC448, 2SC4480, 2SC4481, 2SC4482
Keywords - 2SC4475 pdf specs
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