2SC4560 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4560
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 210 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO247
2SC4560 Transistor Equivalent Substitute - Cross-Reference Search
2SC4560 Datasheet (PDF)
2sa1749 2sc4564.pdf
Ordering number:EN3643PNP/NPN Epitaxial Planar Silicon Transistors2SA1749/2SC4564High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=400MHz (typ).unit:mm High breakdown voltage : VCEO 200V min.2042A High current.[2SA1749/2SC4564] Small reverse transfer capacitance and excellent highfrequnecy chacateristics :Cre=
2sc4563.pdf
Ordering number:EN4728PNP Epitaxial Planar Silicon Transistor2SC4563Ultrahigh-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High fT : fT=1.2GHz typ.unit:mm High breakdown voltage : VCEO 80V.2010C High current : IC=500mA.[2SC4411] Small reverse transfer capacitance : Cre=3.8pF10.24.53.65.1(VCB=30V). 1.3 Adoption o
2sc4568.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4568NPN SILICON EPITAXIAL TRANSISTORUHF TV TUNER OSC/MIXERDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4568 is an NPN silicon epitaxial transistor intended for use as(Units: mm)UHF oscillator and UHF mixer in a tuner of TV receiver.2.80.21.50.65+0.1-0.15FEATURES High gain bandwidth productfT = 5.5 GHz TYP.2 Low output
2sc4569.pdf
DATA SHEETDATA SHEETSILICON TRANSISTOR2SC4569UHF TV TUNER OSC/MIXERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4569 is an NPN silicon epitaxial transistro intended for use as(Units: mm)UHF oscillator and UHF mixer in a tuner of TV receiver.2.80.21.50.65+0.1-0.15FEATURES High gain bandwidty productfT = 5.0 GHz TYP.2 Low output
2sc4562 e.pdf
Transistor2SC4562Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17482.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute
2sc4562.pdf
Transistor2SC4562Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA17482.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute
2sc4568.pdf
SMD Type TransistorsNPN Transistors2SC4568SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=30mA1 2 Collector Emitter Voltage VCEO=12V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc4562.pdf
SMD Type TransistorsNPN Transistors2SC4562 Features High transition frequency fT. Small collector output capacitance Cob. Complementary to 2SA17481 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector C
2sc4569.pdf
SMD Type TransistorsNPN Transistors2SC4569SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=60mA1 2 Collector Emitter Voltage VCEO=12V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .