All Transistors. 2SC4597 Datasheet

 

2SC4597 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4597
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO218

 2SC4597 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4597 Datasheet (PDF)

 ..1. Size:118K  sanyo
2sc4597.pdf

2SC4597 2SC4597

Ordering number:EN3143NPN Triple Diffused Planar Silicon Transistor2SC4597Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4597]cesses for 2SC4597-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

 8.1. Size:121K  sanyo
2sc4598.pdf

2SC4597 2SC4597

Ordering number:EN3144NPN Triple Diffused Planar Silicon Transistor2SC4598Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4598]cesses for 2SC4598-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

 8.2. Size:128K  sanyo
2sc4599.pdf

2SC4597 2SC4597

Ordering number:EN3145NPN Triple Diffused Planar Silicon Transistor2SC4599Switching Regulator ApplicationsFeatures Package Dimensions Surface mount type device making the followingunit:mmpossible.2069C-Reduction in the number of manufacturing pro-[2SC4599]cesses for 2SC4599-applied equipment.10.24.51.3-High density surface mount applications.-Small size of 2SC

 8.3. Size:24K  hitachi
2sc4593.pdf

2SC4597 2SC4597

2SC4593Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineCMPAK311. Emitter2. Base23. Collector2SC4593Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC 100 mWJunction

 8.4. Size:24K  hitachi
2sc4591.pdf

2SC4597 2SC4597

2SC4591Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC4591Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC 150 mWJunction

 8.5. Size:48K  hitachi
2sc4592.pdf

2SC4597 2SC4597

2SC4592Silicon NPN EpitaxialApplicationUHF / VHF wide band amplifierOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC4592Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage VCEO 9VEmitter to base voltage VEBO 1.5 VCollector current IC 50 mACollector power dissipation PC

 8.6. Size:69K  wingshing
2sc4596e.pdf

2SC4597

2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTORGENERAL DESCRIPTIONHigh frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and generalpurposeTO-220FQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 100 VCollector-emitter voltage (open base)VCEO - 60 VCollector current (DC)I

 8.7. Size:349K  kexin
2sc4591.pdf

2SC4597

SMD Type TransistorsNPN Transistors2SC4591SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=9V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

 8.8. Size:190K  inchange semiconductor
2sc4595.pdf

2SC4597 2SC4597

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4595DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 2V, I = 2A)FE CE CLow Saturation Voltage-: V = 0.3V(Max)@ (I = 6A, I = 0.3A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

 8.9. Size:179K  inchange semiconductor
2sc4591.pdf

2SC4597 2SC4597

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4591DESCRIPTIONHigh Current-Gain Bandwidth Productf = 9.0GHz TYP. @V = 5 V, I = 20 mAT CE CLow NoiseNF = 1.2 dB TYP. @V = 5 V, I = 5 mA, f = 900 MHzCE CHigh Power GainPG = 12.5 dB TYP. @V = 5 V, I = 20 mA, f = 900 MHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and

 8.10. Size:192K  inchange semiconductor
2sc4596.pdf

2SC4597 2SC4597

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4596DESCRIPTIONLow Collector Saturation Voltage: V = 0.3V(Max)@ I = 3ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Complement to Type 2SA1757100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high sp

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2N2235

 

 
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