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2SC4597 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4597

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 20 MHz

Ganancia de corriente contínua (hfe): 70

Empaquetado / Estuche: TO218

Búsqueda de reemplazo de transistor bipolar 2SC4597

 

2SC4597 Datasheet (PDF)

1.1. 2sc4597.pdf Size:118K _sanyo

2SC4597
2SC4597

Ordering number:EN3143 NPN Triple Diffused Planar Silicon Transistor 2SC4597 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit:mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4597] cesses for 2SC4597-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC4597

4.1. 2sc4598.pdf Size:121K _sanyo

2SC4597
2SC4597

Ordering number:EN3144 NPN Triple Diffused Planar Silicon Transistor 2SC4598 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit:mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4598] cesses for 2SC4598-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC4598

4.2. 2sc4599.pdf Size:128K _sanyo

2SC4597
2SC4597

Ordering number:EN3145 NPN Triple Diffused Planar Silicon Transistor 2SC4599 Switching Regulator Applications Features Package Dimensions Surface mount type device making the following unit:mm possible. 2069C -Reduction in the number of manufacturing pro- [2SC4599] cesses for 2SC4599-applied equipment. 10.2 4.5 1.3 -High density surface mount applications. -Small size of 2SC4599

 4.3. 2sc4592.pdf Size:48K _hitachi

2SC4597
2SC4597

2SC4592 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC4592 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150

4.4. 2sc4593.pdf Size:24K _hitachi

2SC4597
2SC4597

2SC4593 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4593 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction tem

 4.5. 2sc4591.pdf Size:24K _hitachi

2SC4597
2SC4597

2SC4591 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4591 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 9V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temp

4.6. 2sc4596e.pdf Size:69K _wingshing

2SC4597

2SC4596E SILICON EPITAXIAL PLANNAR TRANSISTOR GENERAL DESCRIPTION High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose TO-220F QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 60 V Collector current (DC) IC -

4.7. 2sc4596.pdf Size:241K _inchange_semiconductor

2SC4597
2SC4597

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Complement to Type 2SA1757 APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

4.8. 2sc4595.pdf Size:77K _inchange_semiconductor

2SC4597
2SC4597

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4595 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL

4.9. 2sc4591.pdf Size:349K _kexin

2SC4597

SMD Type Transistors NPN Transistors 2SC4591 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=9V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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