2SC4685 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4685
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 800
Noise Figure, dB: -
Package: ISO126
2SC4685 Transistor Equivalent Substitute - Cross-Reference Search
2SC4685 Datasheet (PDF)
1.1. 2sc4685.pdf 
Size:185K _toshiba
4.1. 2sc4688.pdf Size:177K _toshiba
4.2. 2sc4683.pdf Size:179K _toshiba
4.3. 2sc4686 2sc4686a.pdf Size:135K _toshiba
2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications Unit: mm High-Voltage Switching Applications High-Voltage Amplifier Applications • High voltage: VCEO = 1200 V (max) • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating U
4.4. 2sc4689.pdf Size:176K _toshiba
4.5. 2sc4682.pdf Size:177K _toshiba
4.6. 2sc4684.pdf Size:195K _toshiba
2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications • High DC current gain : h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C : h = 250 (V = 2 V, I = 4 A) FE (2) CE C • Low collector saturation voltage : V = 0.5 V (max) (I = 4 A, I = 40 mA) CE (sat) C B • High power dissipation : P
4.7. 2sc4686.pdf Size:223K _toshiba
4.8. 2sc4686a.pdf Size:207K _toshiba
4.9. 2sc4681.pdf Size:68K _toshiba
2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications • Excellent hFE linearity : h = 200 to 600 (V = 2 V, I = 0.5 A) FE (1) CE C : h = 140 (min), 200 (typ.) (V = 2 V, I = 3 A) FE (2) CE C • Low collector saturation voltage : V = 0.5 V (max) (I = 3 A, I = 60 mA) CE (sat) C B • Compleme
4.10. 2sc4680.pdf Size:35K _hitachi
2SC4680 Silicon NPN Epitaxial Application VHF / UHF high frequency switching Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4680 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8V Emitter to base v
4.11. 2sc4688.pdf Size:123K _jmnic
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4688 DESCRIPTION · ·With TO-3PFM package ·Complement to type 2SA1803 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Maximum absolute
4.12. 2sc4689.pdf Size:110K _jmnic
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4689 DESCRIPTION ·With TO-3PFM package ·Complementary to 2SA1804 ·Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=?) S
4.13. 2sc4687.pdf Size:150K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC4687 DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maxim
4.14. 2sc4688.pdf Size:82K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4688 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Complement to type 2SA1803 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Ў¤ A
4.15. 2sc4689.pdf Size:85K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4689 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Complementary to 2SA1804 Ў¤ Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute ma
4.16. 2sc4687.pdf Size:119K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4687 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High breakdown voltage Ў¤ Fast switching speed Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
4.17. 2sc4680.pdf Size:586K _kexin
SMD Type Transistors NPN Transistors 2SC4680 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
