2SC4685 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4685 📄📄

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 45 pF

Ganancia de corriente contínua (hFE): 800

Encapsulados: ISO126

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2SC4685 datasheet

..1. Size:185K toshiba
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8.1. Size:207K toshiba
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8.2. Size:176K toshiba
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8.3. Size:177K toshiba
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8.4. Size:179K toshiba
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8.5. Size:223K toshiba
2sc4686.pdf pdf_icon

8.6. Size:195K toshiba
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2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Unit mm Medium Power Amplifier Applications High DC current gain h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C h = 250 (V = 2 V, I = 4 A) FE (2) CE C Low collector saturation voltage V = 0.5 V (max) (I = 4 A, I = 40 mA) CE (sat) C B High power dissipation P

8.7. Size:177K toshiba
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8.8. Size:68K toshiba
2sc4681.pdf pdf_icon

2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 200 to 600 (V = 2 V, I = 0.5 A) FE (1) CE C h = 140 (min), 200 (typ.) (V = 2 V, I = 3 A) FE (2) CE C Low collector saturation voltage V = 0.5 V (max) (I = 3 A, I = 60 mA) CE (sat) C B Compleme

8.9. Size:135K toshiba
2sc4686 2sc4686a.pdf pdf_icon

2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications Unit mm High-Voltage Switching Applications High-Voltage Amplifier Applications High voltage VCEO = 1200 V (max) Small collector output capacitance Cob = 2.2 pF (typ.) (VCB = 100 V) Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating U

8.10. Size:35K hitachi
2sc4680.pdf pdf_icon

2SC4680 Silicon NPN Epitaxial Application VHF / UHF high frequency switching Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4680 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 12 V Collector to emitter voltage VCEO 8V Emitter t

8.11. Size:110K jmnic
2sc4689.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4689 DESCRIPTION With TO-3PFM package Complementary to 2SA1804 Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=

8.12. Size:150K jmnic
2sc4687.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC4687 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute ma

8.13. Size:123K jmnic
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4688 DESCRIPTION With TO-3PFM package Complement to type 2SA1803 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Maximum absolu

8.14. Size:586K kexin
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SMD Type Transistors NPN Transistors 2SC4680 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect

8.15. Size:197K inchange semiconductor
2sc4689.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4689 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 6A CE(sat) C Complement to Type 2SA1804 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier a

8.16. Size:187K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4687 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A

8.17. Size:195K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 5A CE(sat) C Complement to Type 2SA1803 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier ap

Otros transistores... 2SC4679, 2SC468, 2SC4681, 2SC4681A, 2SC4681B, 2SC4682, 2SC4683, 2SC4684, 2N2907, 2SC4686, 2SC4686A, 2SC4687, 2SC4688, 2SC4688O, 2SC4688R, 2SC4689, 2SC4689O

2SC4685 Datasheet. Equivalente

2SC4685 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ESPECIFICACIONES MÁXIMAS

CARACTERÍSTICAS ELÉCTRICAS

2SC4685 datasheet

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